一种新型 MOSFET,具有横向-纵向电荷耦合功能,可实现极低的 C gd

IF 16.4 1区 化学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Tongyang Wang, Zehong Li, Lu Li, Yang Yang, Yishang Zhao, Ziming Xia, Yige Zheng, Jun Ye, Xuan Xiao
{"title":"一种新型 MOSFET,具有横向-纵向电荷耦合功能,可实现极低的 C gd","authors":"Tongyang Wang, Zehong Li, Lu Li, Yang Yang, Yishang Zhao, Ziming Xia, Yige Zheng, Jun Ye, Xuan Xiao","doi":"10.1088/1361-6641/ad3845","DOIUrl":null,"url":null,"abstract":"\n A novel MOSFET with lateral-vertical charge coupling (LVCC-MOSFET) is proposed in this paper. Lateral charge coupling is enabled by metal field plate, lightly doped drain (LDD) and P-Epi layer to reduce Cgd. Vertical charge coupling is enabled by shield gate, sinker and P-Epi layer to support high breakdown voltage (BV) and further reduce Cgd. By combining both lateral charge coupling and vertical charge coupling, which is first proposed in low-voltage power MOSFETs, tradeoff relationship between BV, Ron and Cgd can be significantly improved. It is verified by both small-signal analysis and transient capacitance simulation that gate-to-drain capacitance of the proposed LVCC-MOSFET can be reduced by more than 99% without deterioration of BV and Ron. LVCC-MOSFET achieves 93.7% reduction in Qgd and Ron×Qgd is only 0.81 mΩꞏnC, which is reduced by 93.9%. Furthermore, Eon and Eoff can be reduced by 73.6% and 53.8%, respectively. Hot carrier injection (HCI) reliability can be enhanced by reducing electric field and impact ionization generation rate near drain-side gate oxide. Besides, the LVCC-MOSFET can be feasibly manufactured with compatible fabrication process flow and only three extra steps are needed.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2024-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A novel MOSFET with lateral-vertical charge coupling for extremely low C\\n gd\",\"authors\":\"Tongyang Wang, Zehong Li, Lu Li, Yang Yang, Yishang Zhao, Ziming Xia, Yige Zheng, Jun Ye, Xuan Xiao\",\"doi\":\"10.1088/1361-6641/ad3845\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n A novel MOSFET with lateral-vertical charge coupling (LVCC-MOSFET) is proposed in this paper. Lateral charge coupling is enabled by metal field plate, lightly doped drain (LDD) and P-Epi layer to reduce Cgd. Vertical charge coupling is enabled by shield gate, sinker and P-Epi layer to support high breakdown voltage (BV) and further reduce Cgd. By combining both lateral charge coupling and vertical charge coupling, which is first proposed in low-voltage power MOSFETs, tradeoff relationship between BV, Ron and Cgd can be significantly improved. It is verified by both small-signal analysis and transient capacitance simulation that gate-to-drain capacitance of the proposed LVCC-MOSFET can be reduced by more than 99% without deterioration of BV and Ron. LVCC-MOSFET achieves 93.7% reduction in Qgd and Ron×Qgd is only 0.81 mΩꞏnC, which is reduced by 93.9%. Furthermore, Eon and Eoff can be reduced by 73.6% and 53.8%, respectively. Hot carrier injection (HCI) reliability can be enhanced by reducing electric field and impact ionization generation rate near drain-side gate oxide. Besides, the LVCC-MOSFET can be feasibly manufactured with compatible fabrication process flow and only three extra steps are needed.\",\"PeriodicalId\":1,\"journal\":{\"name\":\"Accounts of Chemical Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":16.4000,\"publicationDate\":\"2024-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Accounts of Chemical Research\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6641/ad3845\",\"RegionNum\":1,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad3845","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

本文提出了一种新型横向-纵向电荷耦合 MOSFET(LVCC-MOSFET)。金属场板、轻掺杂漏极(LDD)和 P-Epi 层实现了横向电荷耦合,从而降低了 Cgd。通过屏蔽栅极、沉降片和 P-Epi 层实现垂直电荷耦合,以支持高击穿电压 (BV) 并进一步降低 Cgd。通过结合横向电荷耦合和垂直电荷耦合(这是首次在低压功率 MOSFET 中提出),BV、Ron 和 Cgd 之间的权衡关系可以得到显著改善。通过小信号分析和瞬态电容仿真验证,所提出的 LVCC-MOSFET 的栅漏电容可降低 99% 以上,而 BV 和 Ron 不会恶化。LVCC-MOSFET 的 Qgd 降低了 93.7%,Ron×Qgd 仅为 0.81 mΩꞏnC,降低了 93.9%。此外,Eon 和 Eoff 可分别降低 73.6% 和 53.8%。通过降低漏极侧栅极氧化物附近的电场和冲击电离产生率,可以提高热载流子注入(HCI)的可靠性。此外,LVCC-MOSFET 可通过兼容的制造工艺流程制造,只需三个额外步骤。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel MOSFET with lateral-vertical charge coupling for extremely low C gd
A novel MOSFET with lateral-vertical charge coupling (LVCC-MOSFET) is proposed in this paper. Lateral charge coupling is enabled by metal field plate, lightly doped drain (LDD) and P-Epi layer to reduce Cgd. Vertical charge coupling is enabled by shield gate, sinker and P-Epi layer to support high breakdown voltage (BV) and further reduce Cgd. By combining both lateral charge coupling and vertical charge coupling, which is first proposed in low-voltage power MOSFETs, tradeoff relationship between BV, Ron and Cgd can be significantly improved. It is verified by both small-signal analysis and transient capacitance simulation that gate-to-drain capacitance of the proposed LVCC-MOSFET can be reduced by more than 99% without deterioration of BV and Ron. LVCC-MOSFET achieves 93.7% reduction in Qgd and Ron×Qgd is only 0.81 mΩꞏnC, which is reduced by 93.9%. Furthermore, Eon and Eoff can be reduced by 73.6% and 53.8%, respectively. Hot carrier injection (HCI) reliability can be enhanced by reducing electric field and impact ionization generation rate near drain-side gate oxide. Besides, the LVCC-MOSFET can be feasibly manufactured with compatible fabrication process flow and only three extra steps are needed.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Accounts of Chemical Research
Accounts of Chemical Research 化学-化学综合
CiteScore
31.40
自引率
1.10%
发文量
312
审稿时长
2 months
期刊介绍: Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance. Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信