Tongyang Wang, Zehong Li, Lu Li, Yang Yang, Yishang Zhao, Ziming Xia, Yige Zheng, Jun Ye, Xuan Xiao
{"title":"一种新型 MOSFET,具有横向-纵向电荷耦合功能,可实现极低的 C gd","authors":"Tongyang Wang, Zehong Li, Lu Li, Yang Yang, Yishang Zhao, Ziming Xia, Yige Zheng, Jun Ye, Xuan Xiao","doi":"10.1088/1361-6641/ad3845","DOIUrl":null,"url":null,"abstract":"\n A novel MOSFET with lateral-vertical charge coupling (LVCC-MOSFET) is proposed in this paper. Lateral charge coupling is enabled by metal field plate, lightly doped drain (LDD) and P-Epi layer to reduce Cgd. Vertical charge coupling is enabled by shield gate, sinker and P-Epi layer to support high breakdown voltage (BV) and further reduce Cgd. By combining both lateral charge coupling and vertical charge coupling, which is first proposed in low-voltage power MOSFETs, tradeoff relationship between BV, Ron and Cgd can be significantly improved. It is verified by both small-signal analysis and transient capacitance simulation that gate-to-drain capacitance of the proposed LVCC-MOSFET can be reduced by more than 99% without deterioration of BV and Ron. LVCC-MOSFET achieves 93.7% reduction in Qgd and Ron×Qgd is only 0.81 mΩꞏnC, which is reduced by 93.9%. Furthermore, Eon and Eoff can be reduced by 73.6% and 53.8%, respectively. Hot carrier injection (HCI) reliability can be enhanced by reducing electric field and impact ionization generation rate near drain-side gate oxide. Besides, the LVCC-MOSFET can be feasibly manufactured with compatible fabrication process flow and only three extra steps are needed.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2024-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A novel MOSFET with lateral-vertical charge coupling for extremely low C\\n gd\",\"authors\":\"Tongyang Wang, Zehong Li, Lu Li, Yang Yang, Yishang Zhao, Ziming Xia, Yige Zheng, Jun Ye, Xuan Xiao\",\"doi\":\"10.1088/1361-6641/ad3845\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n A novel MOSFET with lateral-vertical charge coupling (LVCC-MOSFET) is proposed in this paper. Lateral charge coupling is enabled by metal field plate, lightly doped drain (LDD) and P-Epi layer to reduce Cgd. Vertical charge coupling is enabled by shield gate, sinker and P-Epi layer to support high breakdown voltage (BV) and further reduce Cgd. By combining both lateral charge coupling and vertical charge coupling, which is first proposed in low-voltage power MOSFETs, tradeoff relationship between BV, Ron and Cgd can be significantly improved. It is verified by both small-signal analysis and transient capacitance simulation that gate-to-drain capacitance of the proposed LVCC-MOSFET can be reduced by more than 99% without deterioration of BV and Ron. LVCC-MOSFET achieves 93.7% reduction in Qgd and Ron×Qgd is only 0.81 mΩꞏnC, which is reduced by 93.9%. Furthermore, Eon and Eoff can be reduced by 73.6% and 53.8%, respectively. Hot carrier injection (HCI) reliability can be enhanced by reducing electric field and impact ionization generation rate near drain-side gate oxide. Besides, the LVCC-MOSFET can be feasibly manufactured with compatible fabrication process flow and only three extra steps are needed.\",\"PeriodicalId\":1,\"journal\":{\"name\":\"Accounts of Chemical Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":16.4000,\"publicationDate\":\"2024-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Accounts of Chemical Research\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6641/ad3845\",\"RegionNum\":1,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1088/1361-6641/ad3845","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
A novel MOSFET with lateral-vertical charge coupling for extremely low C
gd
A novel MOSFET with lateral-vertical charge coupling (LVCC-MOSFET) is proposed in this paper. Lateral charge coupling is enabled by metal field plate, lightly doped drain (LDD) and P-Epi layer to reduce Cgd. Vertical charge coupling is enabled by shield gate, sinker and P-Epi layer to support high breakdown voltage (BV) and further reduce Cgd. By combining both lateral charge coupling and vertical charge coupling, which is first proposed in low-voltage power MOSFETs, tradeoff relationship between BV, Ron and Cgd can be significantly improved. It is verified by both small-signal analysis and transient capacitance simulation that gate-to-drain capacitance of the proposed LVCC-MOSFET can be reduced by more than 99% without deterioration of BV and Ron. LVCC-MOSFET achieves 93.7% reduction in Qgd and Ron×Qgd is only 0.81 mΩꞏnC, which is reduced by 93.9%. Furthermore, Eon and Eoff can be reduced by 73.6% and 53.8%, respectively. Hot carrier injection (HCI) reliability can be enhanced by reducing electric field and impact ionization generation rate near drain-side gate oxide. Besides, the LVCC-MOSFET can be feasibly manufactured with compatible fabrication process flow and only three extra steps are needed.
期刊介绍:
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.