High harmonic generation in monolayer indium nitride

In our work, we theoretically investigate high harmonic generation (HHG) in monolayer hexagonal indium nitride (h-InN) based on the semiconductor Bloch equation under strong laser fields. Compared with h-BN, there is no multiplateau in h-InN. This is because the intraband mechanism dominates the total HHG, and the harmonic generated by the intraband current is about three orders of magnitude higher than that generated by the interband polarization. We find that the higher order part of the HHG is mainly supplied by the interband current, which can be analyzed on the basis of the transition dipole moments between the energy bands. In addition, we found that the HHG of h-InN is sensitive to the external strains due to the modified band dispersion in the electronic structures. This study provides a useful reference for understanding the microscopic mechanism of laser-solid interaction.