通过单次远场测量稳定确定阻抗障碍物

IF 4.6 Q2 MATERIALS SCIENCE, BIOMATERIALS
Huaian Diao, Hongyu Liu, Longyue Tao
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引用次数: 0

摘要

在确定 R2 中的阻抗障碍时,我们建立了对数型的尖锐稳定性估计。障碍物为多边形,表面阻抗参数为非零常数。我们使用单一远场模式建立了稳定性结果,这构成了反向散射理论中的一个长期问题。这是文献中第一个通过单一远场测量确定阻抗障碍物的稳定性结果。同时确定障碍物和边界阻抗的稳定性是根据经典的豪斯多夫距离确定的。为建立上述稳定性结果而开发的数学策略有几项技术创新和发展。首先,稳定性分析是以微观局部的方式围绕角点进行的。其次,我们的稳定性估计在障碍物的几何配置和角点处的波场消失阶数之间建立了明确的关系。第三,我们开发了新颖的误差传播技术,利用阻抗边界条件解决转角处波场的奇异性问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Stable determination of an impedance obstacle by a single far-field measurement
We establish sharp stability estimates of logarithmic type in determining an impedance obstacle in R2 . The obstacle is the polygonal shape and the surface impedance parameter is non-zero constant. We establish the stability results using a single far-field pattern, constituting a longstanding problem in the inverse scattering theory. This is the first stability result in the literature in determining an impedance obstacle by a single far-field measurement. The stability in simultaneously determining the obstacle and the boundary impedance is established in terms of the classical Hausdorff distance. Several technical novelties and developments in the mathematical strategy developed for establishing the aforementioned stability results exist. First, the stability analysis is conducted around a corner point in a micro-local manner. Second, our stability estimates establish explicit relationships between the obstacle’s geometric configurations and the wave field’s vanishing order at the corner point. Third, we develop novel error propagation techniques to tackle singularities of the wave field at a corner with the impedance boundary condition.
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来源期刊
ACS Applied Bio Materials
ACS Applied Bio Materials Chemistry-Chemistry (all)
CiteScore
9.40
自引率
2.10%
发文量
464
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