Ammar Armghan, Lway Faisal Abdulrazak, Muhammad Abuzar Baqir, Muhammad Saqlain, Hammad Al-Shammari
{"title":"在太赫兹范围内工作的多波段、偏振不敏感吸收器","authors":"Ammar Armghan, Lway Faisal Abdulrazak, Muhammad Abuzar Baqir, Muhammad Saqlain, Hammad Al-Shammari","doi":"10.1007/s10825-024-02151-y","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, we analyze a thin-size metasurface-based multiband terahertz (THz) absorber with a top layer comprised of nickel-made circled plus-shaped resonators. The geometric structure of the proposed absorber consists of subwavelength size and periodically arranged nickel resonators at the top followed by substrate SiO<sub>2</sub> film, and the silver layer at the bottom features several high absorption bands within the 1–5-THz operating range. The proposed multiband THz absorber shows excellent absorption characteristics with perfect absorptivity, 100% at 1.5 THz, 98% at 3.2 THz, 96% at 3.72 THz, and 100% at 4.26 THz, respectively. The symmetry in the top-layer design of the unit cell shows persistence to incident waves with different polarization and makes this device independent of variation in the polarization of the waves. Besides that, surface current density analysis of the absorber illustrates that high absorption bands are achieved due to the existence of strong electric resonance in the unit cell structure. It is believed that the proposed multiband terahertz absorber with high absorption characteristics and polarization-independent behavior can be used in the field of THz shielding, THz detectors and emitters, THz sensing, and thermal imaging.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 3","pages":"533 - 539"},"PeriodicalIF":2.2000,"publicationDate":"2024-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Multiband, polarization-insensitive absorber operating in the terahertz range\",\"authors\":\"Ammar Armghan, Lway Faisal Abdulrazak, Muhammad Abuzar Baqir, Muhammad Saqlain, Hammad Al-Shammari\",\"doi\":\"10.1007/s10825-024-02151-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this study, we analyze a thin-size metasurface-based multiband terahertz (THz) absorber with a top layer comprised of nickel-made circled plus-shaped resonators. The geometric structure of the proposed absorber consists of subwavelength size and periodically arranged nickel resonators at the top followed by substrate SiO<sub>2</sub> film, and the silver layer at the bottom features several high absorption bands within the 1–5-THz operating range. The proposed multiband THz absorber shows excellent absorption characteristics with perfect absorptivity, 100% at 1.5 THz, 98% at 3.2 THz, 96% at 3.72 THz, and 100% at 4.26 THz, respectively. The symmetry in the top-layer design of the unit cell shows persistence to incident waves with different polarization and makes this device independent of variation in the polarization of the waves. Besides that, surface current density analysis of the absorber illustrates that high absorption bands are achieved due to the existence of strong electric resonance in the unit cell structure. It is believed that the proposed multiband terahertz absorber with high absorption characteristics and polarization-independent behavior can be used in the field of THz shielding, THz detectors and emitters, THz sensing, and thermal imaging.</p></div>\",\"PeriodicalId\":620,\"journal\":{\"name\":\"Journal of Computational Electronics\",\"volume\":\"23 3\",\"pages\":\"533 - 539\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-03-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Computational Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10825-024-02151-y\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-024-02151-y","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Multiband, polarization-insensitive absorber operating in the terahertz range
In this study, we analyze a thin-size metasurface-based multiband terahertz (THz) absorber with a top layer comprised of nickel-made circled plus-shaped resonators. The geometric structure of the proposed absorber consists of subwavelength size and periodically arranged nickel resonators at the top followed by substrate SiO2 film, and the silver layer at the bottom features several high absorption bands within the 1–5-THz operating range. The proposed multiband THz absorber shows excellent absorption characteristics with perfect absorptivity, 100% at 1.5 THz, 98% at 3.2 THz, 96% at 3.72 THz, and 100% at 4.26 THz, respectively. The symmetry in the top-layer design of the unit cell shows persistence to incident waves with different polarization and makes this device independent of variation in the polarization of the waves. Besides that, surface current density analysis of the absorber illustrates that high absorption bands are achieved due to the existence of strong electric resonance in the unit cell structure. It is believed that the proposed multiband terahertz absorber with high absorption characteristics and polarization-independent behavior can be used in the field of THz shielding, THz detectors and emitters, THz sensing, and thermal imaging.
期刊介绍:
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.