Aniello Pelella, Kimberly Intonti, Ofelia Durante, Arun Kumar, Loredana Viscardi, Sebastiano De Stefano, Paola Romano, Filippo Giubileo, Hazel Neill, Vilas Patil, Lida Ansari, Brendan Roycroft, Paul K Hurley, Farzan Gity, Antonio Di Bartolomeo
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引用次数: 0
摘要
机械剥离的多层 WS2 片被用作场效应晶体管的沟道，用于可见光和近红外光谱范围内的低功率光电探测。随温度变化而进行的电学特性分析表明，该器件具有 n 型传导，漏极和源极接触处的肖特基势垒略有不同。WS2 光晶体管可在自供电模式下工作，在光照下可产生电流和电压。可见光和近红外波段的光谱光响应在 1250 纳米附近显示出很高的响应率（4.5 μA/W），这使得该器件在电信应用中大有可为。
Multilayer WS2 for low-power visible and near-infrared phototransistors.
Mechanically exfoliated multilayer WS2 flakes are used as the channel of field effect transistors for low-power photodetection in the visible and near-infrared (NIR) spectral range. The electrical characterization as a function of the temperature reveals devices with n-type conduction and slightly different Schottky barriers at the drain and source contacts. The WS2 phototransistors can be operated in self-powered mode, yielding both a current and a voltage when exposed to light. The spectral photoresponse in the visible and the NIR ranges shows a high responsivity (4.5 μA/W) around 1250 nm, making the devices promising for telecommunication applications.
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