{"title":"气体对水平带状生长的影响","authors":"Nojan Bagheri-Sadeghi, Brian T. Helenbrook","doi":"10.1016/j.jcrysgro.2024.127675","DOIUrl":null,"url":null,"abstract":"<div><p>Three-phase (solid, melt, and gas) and two-phase (solid and melt) models of horizontal ribbon growth were compared to identify the significance of different gas effects. The boundary conditions at the melt–gas and solid–gas interfaces for two-phase simulations were obtained from decoupled simulations of the gas phase. The results showed that the gas shear stress strongly changes the flow and temperature fields and the position of the triple-phase line. Also, the gas pressure distribution determined the vertical position of the triple-phase line. In the absence of growth angle effects, the results of the two-phase model with specified convective heat transfer coefficient, shear stress, and pressure as boundary conditions along the gas phase interface closely matched that of the three-phase model. Even with non-zero growth angle effects, the two-phase model with all the boundary conditions agreed well with three-phase simulation results, despite increased deviations at higher pull speeds. Finally, the results indicated that gas-induced velocities are significant compared to the Marangoni and buoyancy velocities, which could lead to flow instabilities and the variations in solid shape as observed in HRG experiments.</p></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":null,"pages":null},"PeriodicalIF":1.7000,"publicationDate":"2024-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Gas effects on horizontal ribbon growth\",\"authors\":\"Nojan Bagheri-Sadeghi, Brian T. Helenbrook\",\"doi\":\"10.1016/j.jcrysgro.2024.127675\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Three-phase (solid, melt, and gas) and two-phase (solid and melt) models of horizontal ribbon growth were compared to identify the significance of different gas effects. The boundary conditions at the melt–gas and solid–gas interfaces for two-phase simulations were obtained from decoupled simulations of the gas phase. The results showed that the gas shear stress strongly changes the flow and temperature fields and the position of the triple-phase line. Also, the gas pressure distribution determined the vertical position of the triple-phase line. In the absence of growth angle effects, the results of the two-phase model with specified convective heat transfer coefficient, shear stress, and pressure as boundary conditions along the gas phase interface closely matched that of the three-phase model. Even with non-zero growth angle effects, the two-phase model with all the boundary conditions agreed well with three-phase simulation results, despite increased deviations at higher pull speeds. Finally, the results indicated that gas-induced velocities are significant compared to the Marangoni and buoyancy velocities, which could lead to flow instabilities and the variations in solid shape as observed in HRG experiments.</p></div>\",\"PeriodicalId\":353,\"journal\":{\"name\":\"Journal of Crystal Growth\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2024-03-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Crystal Growth\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0022024824001106\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824001106","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
Three-phase (solid, melt, and gas) and two-phase (solid and melt) models of horizontal ribbon growth were compared to identify the significance of different gas effects. The boundary conditions at the melt–gas and solid–gas interfaces for two-phase simulations were obtained from decoupled simulations of the gas phase. The results showed that the gas shear stress strongly changes the flow and temperature fields and the position of the triple-phase line. Also, the gas pressure distribution determined the vertical position of the triple-phase line. In the absence of growth angle effects, the results of the two-phase model with specified convective heat transfer coefficient, shear stress, and pressure as boundary conditions along the gas phase interface closely matched that of the three-phase model. Even with non-zero growth angle effects, the two-phase model with all the boundary conditions agreed well with three-phase simulation results, despite increased deviations at higher pull speeds. Finally, the results indicated that gas-induced velocities are significant compared to the Marangoni and buoyancy velocities, which could lead to flow instabilities and the variations in solid shape as observed in HRG experiments.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.