{"title":"三维金属卤化物包晶场效应晶体管中的离子迁移","authors":"Jinghai Li, Yanyan Gong, William W. Yu","doi":"10.1002/elt2.28","DOIUrl":null,"url":null,"abstract":"<p>3D perovskite materials are advancing rapidly in the field of photovoltaics and light-emitting diodes, but the development in field effect transistors (FETs) is limited due to their intrinsic ion migration. Ion migration in perovskite FETs can screen the electric field of the gate and affect its modulation, as well as influence the charge carriers transport, leading to non-ideal device characteristics and lower device stability. Here, we provide a concise review that explains the mechanism of ion migration, summarizes the strategies for suppressing ion migration, and concludes with a discussion of the future prospects for 3D perovskite FETs.</p>","PeriodicalId":100403,"journal":{"name":"Electron","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.28","citationCount":"0","resultStr":"{\"title\":\"Ion migration in 3D metal halide perovskite field effect transistors\",\"authors\":\"Jinghai Li, Yanyan Gong, William W. Yu\",\"doi\":\"10.1002/elt2.28\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>3D perovskite materials are advancing rapidly in the field of photovoltaics and light-emitting diodes, but the development in field effect transistors (FETs) is limited due to their intrinsic ion migration. Ion migration in perovskite FETs can screen the electric field of the gate and affect its modulation, as well as influence the charge carriers transport, leading to non-ideal device characteristics and lower device stability. Here, we provide a concise review that explains the mechanism of ion migration, summarizes the strategies for suppressing ion migration, and concludes with a discussion of the future prospects for 3D perovskite FETs.</p>\",\"PeriodicalId\":100403,\"journal\":{\"name\":\"Electron\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-03-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.28\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electron\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/elt2.28\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electron","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/elt2.28","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ion migration in 3D metal halide perovskite field effect transistors
3D perovskite materials are advancing rapidly in the field of photovoltaics and light-emitting diodes, but the development in field effect transistors (FETs) is limited due to their intrinsic ion migration. Ion migration in perovskite FETs can screen the electric field of the gate and affect its modulation, as well as influence the charge carriers transport, leading to non-ideal device characteristics and lower device stability. Here, we provide a concise review that explains the mechanism of ion migration, summarizes the strategies for suppressing ion migration, and concludes with a discussion of the future prospects for 3D perovskite FETs.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
