Enhanced scintillation performance of Cu-doped β-Ga2O3 single crystals grown by floating-zone method

As a booming semiconductor material, -Ga2O3 with an ultra-wide bandgap of 4.8 eV exhibits several advantages in scintillator with high stability and low self-absorption. To further improve the scintillation performance, we grown unintentionally doped (UID), Cu-, Fe-, Mg-, and Si-doped -Ga2O3 substrates by the floating zone (FZ) method. The 0.1 mol% Cu-doped -Ga2O3 exhibits the highest light yield of 6975 ph/MeV with a good linear response, which represents better predictable and stable for the input X-ray energy. Photoluminescence (PL) shows peak emission around 425 nm under the excitation of 254 nm. All the results shows that the Cu-doped -Ga2O3 is an effective scintillator with excellent light yield, which provides an alternative way for the high-performance ionizing radiation detectors.