使用 HfSiOx/SiO2 栅极电介质和 PN 柱的 4.87 kV SiC MOSFET

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Electronic Materials Pub Date : 2024-03-18 DOI:10.1007/s11664-024-11014-y

A. S. Augustine Fletcher, S. Angen Franklin, P. Murugapandiyan, J. Ajayan, D. Nirmal

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引用次数: 0

摘要

我们提出了一种新型碳化硅（SiC）双沟槽金属氧化物半导体场效应晶体管（DTMOSFET）结构，它使用硅酸铪（HfSiOx）电介质与 PN 柱相结合。此外，还利用 Atlas TCAD Silvaco 2D 仿真对其进行了表征，结果表明它具有 4879 V 的超高击穿电压，这是由于 N-漂移层下的 PN 柱改变了电场分布，而 HfSiOx 电介质则减少了冲击电离。所提出的 DTMOSFET 的跨导（gm）和漏极电流（ID）分别达到了 7 mA/mm 和 780 µS/mm。此外，模拟结果还显示了截止频率 fT = 1.28 GHz 和最大频率 fmax = 10.5 GHz。此外，在栅极边缘附近观测到的峰值电场为 0.93 MV/cm。此外，与传统 DTMOSFET 的击穿电压相比，拟议的 DTPNH-MOSFET 的击穿电压提高了 11%。因此，DTPNH-MOSFET 的性能优于其他 SiC MOSFET，是未来大功率电子器件的理想选择。

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4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars

A novel structure of a silicon carbide (SiC) double-trench metal oxide semiconductor field-effect transistor (DTMOSFET) is proposed using a hafnium silicate (HfSiO_x ) dielectric combined with PN pillars. Moreover, it has been characterized using Atlas TCAD Silvaco 2D simulations, and offers a very high breakdown voltage of 4879 V, which is due to the PN pillars under the N-drift layer altering the electric field distribution and HfSiO_x dielectric that diminishes the impact ionization. The proposed DTMOSFET achieves a transconductance (g_m) and drain current (I_D) of 7 mA/mm and 780 µS/mm, respectively. In addition, the simulated results show the cut-off frequency, f_T ₌ 1.28 GHz, and maximum frequency, f_max = 10.5 GHz. In addition, the peak electric field observed near the gate edge is 0.93 MV/cm. Moreover, the proposed DTPNH-MOSFET shows 11% improvement in breakdown voltage when compared to the breakdown voltage of conventional DTMOSFET. Therefore, the DTPNH-MOSFET shows a superior performance over other SiC MOSFETs and is a suitable device for future high-power electronics.

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.