Mabel Rodríguez-Fernández, Saray Gragera, José Carlos Piñero, Rodrigo Alcántara, Javier Navas
{"title":"用于光电设备的光致发光双掺杂 CsPbX3(X:Br,I)包晶量子点","authors":"Mabel Rodríguez-Fernández, Saray Gragera, José Carlos Piñero, Rodrigo Alcántara, Javier Navas","doi":"10.1557/s43577-024-00675-z","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Perovskite quantum dots (PQDs) became a hot spot in recent years due to their amazing properties, such as the high photoluminescence quantum yield, tunable emission, and narrow bandwidth being important for their application in different optoelectronic devices. In this work, Bi-doped CsPbBr<sub>3</sub> and Bi-doped CsPbI<sub>3</sub> PQDs were synthesized through the hot-injection method and compared with pristine CsPbBr<sub>3</sub> and CsPbI<sub>3</sub> to analyze the effect of Bi and the halogen on their properties. In addition, all the samples were synthesized at 130°C, 150°C, and 170°C with the aim of analyzing the effect of the temperature. The results showed a wide range of the emission wavelength from around 500 nm (Bi-doped CsPbBr<sub>3</sub>) to 630 nm (Bi-doped CsPbI<sub>3</sub>) as a consequence of the effect of the halogen in “X” position and a slight blueshift in the main photoluminescence emission band after doping the pristine quantum dots with Bi.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3><h3 data-test=\"abstract-sub-heading\">Impact statement</h3><p>We believe that the work in this article represents an important advance in the application of perovskite quantum dots in optoelectronics applications, such as in LEDs or lasers. We report here the synthesis and characterization of Bi-doped CsPbX<sub>3</sub> perovskite quantum dots (PQDs), being X: Br and I. These Bi-doped PQDs show a wide range of the emission wavelength from around 500 nm (Bi-doped CsPbBr<sub>3</sub>) to 630 nm (Bi-doped CsPbI<sub>3</sub>) as a consequence of the effect of the halogen in “X” position and a slight blueshift in the main photoluminescence emission band after doping the pristine quantum dots with Bi. Therefore, they are good candidates to fabricate optoelectronic devices such as LEDs and lasers thanks to their high photoluminescence emission and their tunable emission.</p>","PeriodicalId":18828,"journal":{"name":"Mrs Bulletin","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photoluminescent Bi-doped CsPbX3 (X: Br, I) perovskite quantum dots for optoelectronic devices\",\"authors\":\"Mabel Rodríguez-Fernández, Saray Gragera, José Carlos Piñero, Rodrigo Alcántara, Javier Navas\",\"doi\":\"10.1557/s43577-024-00675-z\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>Perovskite quantum dots (PQDs) became a hot spot in recent years due to their amazing properties, such as the high photoluminescence quantum yield, tunable emission, and narrow bandwidth being important for their application in different optoelectronic devices. In this work, Bi-doped CsPbBr<sub>3</sub> and Bi-doped CsPbI<sub>3</sub> PQDs were synthesized through the hot-injection method and compared with pristine CsPbBr<sub>3</sub> and CsPbI<sub>3</sub> to analyze the effect of Bi and the halogen on their properties. In addition, all the samples were synthesized at 130°C, 150°C, and 170°C with the aim of analyzing the effect of the temperature. The results showed a wide range of the emission wavelength from around 500 nm (Bi-doped CsPbBr<sub>3</sub>) to 630 nm (Bi-doped CsPbI<sub>3</sub>) as a consequence of the effect of the halogen in “X” position and a slight blueshift in the main photoluminescence emission band after doping the pristine quantum dots with Bi.</p><h3 data-test=\\\"abstract-sub-heading\\\">Graphical abstract</h3><h3 data-test=\\\"abstract-sub-heading\\\">Impact statement</h3><p>We believe that the work in this article represents an important advance in the application of perovskite quantum dots in optoelectronics applications, such as in LEDs or lasers. We report here the synthesis and characterization of Bi-doped CsPbX<sub>3</sub> perovskite quantum dots (PQDs), being X: Br and I. These Bi-doped PQDs show a wide range of the emission wavelength from around 500 nm (Bi-doped CsPbBr<sub>3</sub>) to 630 nm (Bi-doped CsPbI<sub>3</sub>) as a consequence of the effect of the halogen in “X” position and a slight blueshift in the main photoluminescence emission band after doping the pristine quantum dots with Bi. Therefore, they are good candidates to fabricate optoelectronic devices such as LEDs and lasers thanks to their high photoluminescence emission and their tunable emission.</p>\",\"PeriodicalId\":18828,\"journal\":{\"name\":\"Mrs Bulletin\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-03-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Mrs Bulletin\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1557/s43577-024-00675-z\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Mrs Bulletin","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1557/s43577-024-00675-z","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Perovskite quantum dots (PQDs) became a hot spot in recent years due to their amazing properties, such as the high photoluminescence quantum yield, tunable emission, and narrow bandwidth being important for their application in different optoelectronic devices. In this work, Bi-doped CsPbBr3 and Bi-doped CsPbI3 PQDs were synthesized through the hot-injection method and compared with pristine CsPbBr3 and CsPbI3 to analyze the effect of Bi and the halogen on their properties. In addition, all the samples were synthesized at 130°C, 150°C, and 170°C with the aim of analyzing the effect of the temperature. The results showed a wide range of the emission wavelength from around 500 nm (Bi-doped CsPbBr3) to 630 nm (Bi-doped CsPbI3) as a consequence of the effect of the halogen in “X” position and a slight blueshift in the main photoluminescence emission band after doping the pristine quantum dots with Bi.
Graphical abstract
Impact statement
We believe that the work in this article represents an important advance in the application of perovskite quantum dots in optoelectronics applications, such as in LEDs or lasers. We report here the synthesis and characterization of Bi-doped CsPbX3 perovskite quantum dots (PQDs), being X: Br and I. These Bi-doped PQDs show a wide range of the emission wavelength from around 500 nm (Bi-doped CsPbBr3) to 630 nm (Bi-doped CsPbI3) as a consequence of the effect of the halogen in “X” position and a slight blueshift in the main photoluminescence emission band after doping the pristine quantum dots with Bi. Therefore, they are good candidates to fabricate optoelectronic devices such as LEDs and lasers thanks to their high photoluminescence emission and their tunable emission.
期刊介绍:
MRS Bulletin is one of the most widely recognized and highly respected publications in advanced materials research. Each month, the Bulletin provides a comprehensive overview of a specific materials theme, along with industry and policy developments, and MRS and materials-community news and events. Written by leading experts, the overview articles are useful references for specialists, but are also presented at a level understandable to a broad scientific audience.