Sadhana Subhadarshini Mohanty, Pradipta Dutta, Jitendra Kumar Das, Sushanta Kumar Mohapatra, Shofiur Rahman, Reem Alanazi, Nadyah Alanazi, Abdullah N. Alodhayb
{"title":"p 型 IV-IV 族 SiGe TFET 的模拟性能和线性度分析","authors":"Sadhana Subhadarshini Mohanty, Pradipta Dutta, Jitendra Kumar Das, Sushanta Kumar Mohapatra, Shofiur Rahman, Reem Alanazi, Nadyah Alanazi, Abdullah N. Alodhayb","doi":"10.1007/s10825-024-02141-0","DOIUrl":null,"url":null,"abstract":"<div><p>This work investigates a dual-material gate p-channel tunnel field-effect transistor (p-DMG-TFET) with a Si/SiGe heterojunction for achieving better performance in radio frequency (RF) applications. The results of the simulation demonstrate an improved on-current/off-current ratio (<i>I</i><sub>on</sub>/<i>I</i><sub>off</sub> ~ 10<sup>9</sup>) and minimum subthreshold swing (19 mV/decade) for the proposed Si<sub>0.7</sub>Ge<sub>0.3</sub> hetero-TFET versus Si used as channel material. A comprehensive simulation study of both Si<sub>0.7</sub>Ge<sub>0.3</sub> and Si channel devices is performed, and on the basis of their DC, analog/RF, and linearity performance, a direct comparison reveals improved results for digital and analog applications. Numerous characteristics of the proposed DMG-HJ-TFET, including <i>I</i><sub>DS</sub>, <i>C</i><sub>GS</sub>, <i>C</i><sub>GD</sub>, <i>g</i><sub>m</sub>, <i>g</i><sub>ds</sub>, <i>f</i><sub>T</sub>, TGF, TFP, GFP, and GTFP, are investigated and compared with a Si channel device, in which the proposed device shows better performance for RF circuitry applications. RF figures of merit (FOMs) including <i>g</i><sub>m2</sub>, <i>g</i><sub>m3</sub>, VIP<sub>2</sub>, VIP<sub>3</sub>, 1-dB compression point, IIP<sub>3</sub>, and IMD<sub>3</sub> are also investigated for the proposed structure, which again demonstrates better performance.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 2","pages":"244 - 256"},"PeriodicalIF":2.2000,"publicationDate":"2024-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analog performance and linearity analysis of a p-type group IV-IV SiGe TFET\",\"authors\":\"Sadhana Subhadarshini Mohanty, Pradipta Dutta, Jitendra Kumar Das, Sushanta Kumar Mohapatra, Shofiur Rahman, Reem Alanazi, Nadyah Alanazi, Abdullah N. Alodhayb\",\"doi\":\"10.1007/s10825-024-02141-0\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This work investigates a dual-material gate p-channel tunnel field-effect transistor (p-DMG-TFET) with a Si/SiGe heterojunction for achieving better performance in radio frequency (RF) applications. The results of the simulation demonstrate an improved on-current/off-current ratio (<i>I</i><sub>on</sub>/<i>I</i><sub>off</sub> ~ 10<sup>9</sup>) and minimum subthreshold swing (19 mV/decade) for the proposed Si<sub>0.7</sub>Ge<sub>0.3</sub> hetero-TFET versus Si used as channel material. A comprehensive simulation study of both Si<sub>0.7</sub>Ge<sub>0.3</sub> and Si channel devices is performed, and on the basis of their DC, analog/RF, and linearity performance, a direct comparison reveals improved results for digital and analog applications. Numerous characteristics of the proposed DMG-HJ-TFET, including <i>I</i><sub>DS</sub>, <i>C</i><sub>GS</sub>, <i>C</i><sub>GD</sub>, <i>g</i><sub>m</sub>, <i>g</i><sub>ds</sub>, <i>f</i><sub>T</sub>, TGF, TFP, GFP, and GTFP, are investigated and compared with a Si channel device, in which the proposed device shows better performance for RF circuitry applications. RF figures of merit (FOMs) including <i>g</i><sub>m2</sub>, <i>g</i><sub>m3</sub>, VIP<sub>2</sub>, VIP<sub>3</sub>, 1-dB compression point, IIP<sub>3</sub>, and IMD<sub>3</sub> are also investigated for the proposed structure, which again demonstrates better performance.</p></div>\",\"PeriodicalId\":620,\"journal\":{\"name\":\"Journal of Computational Electronics\",\"volume\":\"23 2\",\"pages\":\"244 - 256\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-03-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Computational Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10825-024-02141-0\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-024-02141-0","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Analog performance and linearity analysis of a p-type group IV-IV SiGe TFET
This work investigates a dual-material gate p-channel tunnel field-effect transistor (p-DMG-TFET) with a Si/SiGe heterojunction for achieving better performance in radio frequency (RF) applications. The results of the simulation demonstrate an improved on-current/off-current ratio (Ion/Ioff ~ 109) and minimum subthreshold swing (19 mV/decade) for the proposed Si0.7Ge0.3 hetero-TFET versus Si used as channel material. A comprehensive simulation study of both Si0.7Ge0.3 and Si channel devices is performed, and on the basis of their DC, analog/RF, and linearity performance, a direct comparison reveals improved results for digital and analog applications. Numerous characteristics of the proposed DMG-HJ-TFET, including IDS, CGS, CGD, gm, gds, fT, TGF, TFP, GFP, and GTFP, are investigated and compared with a Si channel device, in which the proposed device shows better performance for RF circuitry applications. RF figures of merit (FOMs) including gm2, gm3, VIP2, VIP3, 1-dB compression point, IIP3, and IMD3 are also investigated for the proposed structure, which again demonstrates better performance.
期刊介绍：
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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