Kürşat Kızılkaya , Mustafa Kemal Öztürk , Mustafa Hoştut , Yüksel Ergün , Süleyman Özçelik
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引用次数: 0
摘要
本研究探讨了基于 N 结构的 InAs/AlSb/GaSb II 型超晶格 pbin 型探测器结构。这些系统在电磁波谱的红外区域作为探测器进行吸收。n 型 GaSb 用作衬底。基于 InAs/AlSb/GaSb 的重复 SL 层从底部 InAsSb 层到顶部 GaSb 盖层分别形成了 120、300、15 和 80 个周期的 n 层、i 层、p 层和 p 接触层。利用 SIMS 和 XRD 系统分析了所有层的结构特征。通过 SIMS 分析，对 SL 层的结构深度剖面进行了比较。深度剖面中观察到的界面转变与设计的 T2SL 层一致。通过 XRD 表征，确定了晶体质量参数、晶格常数、周期性和超晶格峰与基底的偏差。测得的位错密度和应变分别为 AS 7.85x107cm-2 和 6.4x10-3 nm。原子力显微镜分析技术用于检测结构的表面形态。此外，还使用了 SEM 分析技术来检测结构的横截面。通过横截面测量，可以观察到 SL 结构内部的界面转变。这项研究实现了具有高晶体质量的超级晶格，结果表明 T2SL 检测器结构取得了成功。
Design and characterization of type-II superlattice-based InAs/AlSb/GaSb detector structure
In this study, N-Structured based InAs/AlSb/GaSb Type-II Superlattice pbin type detector structures are investigated. These systems make absorption in the infrared region in the electromagnetic spectrum as detectors. Structural characterization of these systems is aimed. n-type GaSb is used as the substrate. InAs/AlSb/GaSb-based repetitive SL layers are formed as n-layer, i-layer, p-layer, and p-contact layer from the bottom InAsSb layer to the top GaSb cap layer for 120, 300, 15, and 80 periods, respectively. Structural characterization of all layers is made by using SIMS and XRD systems analyses. The structural depth profile of the SL layers has been presented comparatively through SIMS analysis. The interfacial transitions observed in the depth profile are consistent with the designed T2SL layers. By using XRD characterization, crystal quality parameters, lattice constants, periodicity, and deviation of superlattice peak from the substrate are determined. Such dislocation density and strain are measured AS 7.85x107cm−2 and 6.4x10-3 nm, respectively. AFM analysis technic is used to examine the surface morphology of the structure. Also, SEM analysis is used to examine the cross-section of the structure. The cross-sectional measurements allowed the observation of interfacial transitions within the SL structure. In this study, super lattice with high crystal quality is achieved and results show that T2SL detector structures have succeeded.
期刊介绍：
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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