用于窄带辐射的 InGaAsP/InP 光伏转换器

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-03-15 DOI:10.1134/s1063782623090142

N. S. Potapovich, M. V. Nakhimovich, V. P. Khvostikov

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引用次数: 0

摘要

摘要利用已完成的研究，开发并创建了基于具有外延 p-n 结的 InGaAsP/InP 异质结构的窄带辐射（λ ≈ 1.0-1.3 μm）光电转换器。通过液相外延技术，确定了在广泛的成分范围内创建与磷化铟同周期的高质量四元 InGaAsP 固溶体层所适用的技术体系。

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InGaAsP/InP Photovoltaic Converters for Narrowband Radiation

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InGaAsP/InP Photovoltaic Converters for Narrowband Radiation

Abstract

Utilizing performed research, photoelectric converters of narrow-band radiation (λ ≈ 1.0–1.3 μm) based on InGaAsP/InP heterostructures with an epitaxial p–n junction have been developed and created. Technological regimes that apply of for creating high-quality layers of quaternary InGaAsP solid solutions isoperiodic to indium phosphide in a wide range of compositions by liquid-phase epitaxy have been determined.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.