基于多个 InGaAs/GaAs 量子阱点层的宽带超发光二极管

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-03-15 DOI:10.1134/s1063782623030120

M. V. Maximov, Yu. M. Shernyakov, G. O. Kornyshov, O. I. Simchuk, N. Yu. Gordeev, A. A. Beckman, A. S. Payusov, S. A. Mintairov, N. A. Kalyuzhnyy, M. M. Kulagina, A. E. Zhukov

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引用次数: 0

摘要

摘要我们研究了基于 5 层或 7 层 InGaAs/GaAs 量子井点 (QWD) 的超发光二极管，其设计和有源区均已简化。各层 QWD 的发射峰相互偏移了 15-35 nm，以便在中心波长约为 1 μm 的超发光模式下提供尽可能宽的发射线，而不会出现明显的光谱衰减。对于活性区基于 5 层和 7 层 QWD 的超发光二极管，发射光谱半最大全宽的最大值分别为 92 纳米和 103 纳米。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers

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Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers

Abstract

We have studied superluminescent diodes with simplified design and active region based on 5 or 7 layers of InGaAs/GaAs quantum well-dots (QWDs). Emission peaks of the individual QWD layers are shifted with respect to each other by 15–35 nm to provide as wide as possible emission line in a superluminescent mode with central wavelength of about 1 μm without significant spectral dips. For superluminescent diodes with the active region based on 5 and 7 QWD layers, the maximal value of full width at half maximum of emission spectrum was 92 and 103 nm respectively.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.