关于基于 p-InAsSbP/n-InAs(Sb) 的 LED 中的加热机制

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-03-15 DOI:10.1134/s1063782623030193

A. L. Zakgeim, S. A. Karandashev, A. A. Klimov, R. E. Kunkov, T. S. Lukhmyrina, B. A. Matveev, M. A. Remennyi, A. A. Usikova, A. E. Chernyakov

{"title":"关于基于 p-InAsSbP/n-InAs(Sb) 的 LED 中的加热机制","authors":"A. L. Zakgeim, S. A. Karandashev, A. A. Klimov, R. E. Kunkov, T. S. Lukhmyrina, B. A. Matveev, M. A. Remennyi, A. A. Usikova, A. E. Chernyakov","doi":"10.1134/s1063782623030193","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3>Three main reasons for a temperature increase in activated p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSb/n-InAs double heterostructures has been considered, contribution of nonradiative Auger recombination, electron-phonon interaction and Joule heating to diode temperature increase in single element LEDs and flip-chip diode arrays (1 × 3) were evaluated at forward and reverse bias using data on spatial distribution of the mid-IR radiation intensity and current-voltage characteristics.","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"12 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb)\",\"authors\":\"A. L. Zakgeim, S. A. Karandashev, A. A. Klimov, R. E. Kunkov, T. S. Lukhmyrina, B. A. Matveev, M. A. Remennyi, A. A. Usikova, A. E. Chernyakov\",\"doi\":\"10.1134/s1063782623030193\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3>Three main reasons for a temperature increase in activated p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSb/n-InAs double heterostructures has been considered, contribution of nonradiative Auger recombination, electron-phonon interaction and Joule heating to diode temperature increase in single element LEDs and flip-chip diode arrays (1 × 3) were evaluated at forward and reverse bias using data on spatial distribution of the mid-IR radiation intensity and current-voltage characteristics.\",\"PeriodicalId\":21760,\"journal\":{\"name\":\"Semiconductors\",\"volume\":\"12 1\",\"pages\":\"\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063782623030193\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782623030193","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}

引用次数: 0

摘要

摘要考虑了活化 p-InAsSbP/n-InAs/n-InAsSbP 和 p-InAsSbP/n-InAsSb/n-InAs 双异质结构温度升高的三个主要原因，利用中红外辐射强度的空间分布数据和电流电压特性，评估了非辐射欧杰尔重组、电子-声子相互作用和焦耳热对单个元件 LED 和倒装芯片二极管阵列（1 × 3）中二极管温度升高的贡献。

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On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb)

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On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb)

Abstract

Three main reasons for a temperature increase in activated p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSb/n-InAs double heterostructures has been considered, contribution of nonradiative Auger recombination, electron-phonon interaction and Joule heating to diode temperature increase in single element LEDs and flip-chip diode arrays (1 × 3) were evaluated at forward and reverse bias using data on spatial distribution of the mid-IR radiation intensity and current-voltage characteristics.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.