高电场下 AIIIBV 半导体中热电荷载流子倍增的单极性和无噪声雪崩光电二极管（综述）

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors Pub Date : 2024-03-15 DOI:10.1134/s1063782623090130

M. P. Mikhailova, A. P. Dmitriev, I. A. Andreev, E. V. Ivanov, E. V. Kunitsyna, Yu. P. Yakovlev

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引用次数: 0

摘要

摘要介绍了高电场下多谷 AIIIBV 半导体中冲击电离过程和电荷载流子加热的理论和实验研究结果，并讨论了它们与能带结构特征的关系。其中考虑到了附属 L 谷和 X 谷的作用、价带的复杂结构以及电离系数的取向依赖性。提出了一种选择空穴和电子电离系数比值大的半导体材料的新方法，以利用热电荷载流子倍增的单向性制造无噪声雪崩光电二极管。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Monopolarity of Hot Charge Carrier Multiplication in AIIIBV Semiconductors at High Electric Field and Noiseless Avalanche Photodiodes (a Review)

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Monopolarity of Hot Charge Carrier Multiplication in AIIIBV Semiconductors at High Electric Field and Noiseless Avalanche Photodiodes (a Review)

Abstract

The results of theoretical and experimental studies of impact ionization processes and charge carrier heating in multi-valley A^IIIB^V semiconductors at high electric field are presented and their relationship with the features of the band structure is discussed. A role of subsidiary L- and X-valleys, complex structure of the valence band and orientation dependence of the ionization coefficients are taken into account. A new approach to the choice of semiconductor materials with a large ratio of the ionization coefficients of holes and electrons to create the noiseless avalanche photodiodes due to monopolarity of hot charge carrier multiplication is proposed.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.