低温下 Ga3+/Sc3+ 对混合 YAG 中 Yb3+ 发射的影响

Q2 Engineering

Optical Materials: X Pub Date : 2024-03-08 DOI:10.1016/j.omx.2024.100305

Jan Hostaša , Venkatesan Jambunathan , Dariia Chernomorets , Andreana Piancastelli , Chiara Zanelli , Great Chayran , Francesco Picelli , Martin Smrž , Valentina Biasini , Tomáš Mocek , Laura Esposito

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引用次数: 0

摘要

我们在三种不同的混合石榴石（即 Yb:YGAG、Yb:YSAG 和 Yb:YSGAG）上研究了 Ga3+ 和 Sc3+ 对低温下 Yb:YAG 发射的影响。这些混合石榴石的成分调整是通过与不同浓度的 Ga3+ 或 Sc3+ 或两者进行固态反应制备陶瓷颗粒来实现的。在 Yb:YAG 中加入 Sc3+ 仅会导致有限的光谱增宽。另一方面，掺入 Ga3+ 或同时掺入 Ga3+ 和 Sc3+ 会导致光谱明显变宽。在后一种情况下，这种不均匀的增宽归因于 Ga3+ 和 Sc3+ 混合占据了晶格中的八面体和四方位，从而导致结构的显著变形。

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Effect of Ga3+/Sc3+ on Yb3+ emission in mixed YAG at cryogenic temperatures

We studied the effect of Ga³⁺and Sc³⁺ on Yb:YAG emission at cryogenic temperatures on three different mixed garnets namely Yb:YGAG, Yb:YSAG and Yb:YSGAG. The compositional tuning of these mixed garnets was achieved by preparing ceramic pellets by solid state reaction with different concentration of Ga³⁺, or Sc³⁺, or both. The incorporation of Sc³⁺ in Yb:YAG leads only to a limited spectral broadening. On the other hand, the incorporation of either Ga³⁺ or both Ga³⁺ and Sc³⁺ results in a significant spectral broadening. In the latter case, this inhomogeneous broadening is attributed to the mixed occupancy of both Ga³⁺ and Sc³⁺ in octahedral and tetragonal sites in the crystal lattice leading to a significant distortion in the structure.

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来源期刊

Optical Materials: X Engineering-Electrical and Electronic Engineering

CiteScore

3.30

自引率

0.00%

发文量

审稿时长

91 days