利用砷化镓技术实现具有宽带抑制功能的紧凑型横向谐振低通滤波器

IF 3.7 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal on Emerging and Selected Topics in Circuits and Systems Pub Date : 2023-12-07 DOI:10.1109/JETCAS.2023.3340957

Sudipta Chakraborty;Gayatri Neeharika Sreepada;Michael Heimlich;Anand K. Verma

{"title":"利用砷化镓技术实现具有宽带抑制功能的紧凑型横向谐振低通滤波器","authors":"Sudipta Chakraborty;Gayatri Neeharika Sreepada;Michael Heimlich;Anand K. Verma","doi":"10.1109/JETCAS.2023.3340957","DOIUrl":null,"url":null,"abstract":"This work reports three designs of transverse resonance (TR)-based high-performance compact 5-pole Butterworth low-pass filters (TR-LPFs) at the cut-off frequency (\n<inline-formula> <tex-math>$f_{c}$ </tex-math></inline-formula>\n) 10.5 GHz in \n<inline-formula> <tex-math>$0.15~\\mu \\text{m}$ </tex-math></inline-formula>\n Gallium Arsenide (GaAs) pHEMT technology, with a chip size of 0.82 mm \n<inline-formula> <tex-math>$\\times0.87$ </tex-math></inline-formula>\n mm. Two fabricated TR-LPFs have 20 dB, 30 dB, 40 dB, and 50 dB attenuation levels with rejection bandwidths of (54 GHz, 54 GHz), (32 GHz, 52 GHz), (31 GHz, 50 GHz), and (18.5 GHz, 27 GHz) respectively, and insertion loss of 0.5 dB and 0.6 dB. The TR-LPF is a microstrip-based design, so unlike the lumped elements-based design, it could be designed and fabricated in the GaAs, and other technologies even at millimeter-wave frequencies. Such high performance LPF, using microstrip on a GaAs chip is not reported in the open literature.","PeriodicalId":48827,"journal":{"name":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","volume":"14 1","pages":"19-29"},"PeriodicalIF":3.7000,"publicationDate":"2023-12-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Compact Transverse-Resonance Low-Pass Filter With Wide Stop-Band Rejection Implemented in Gallium Arsenide Technology\",\"authors\":\"Sudipta Chakraborty;Gayatri Neeharika Sreepada;Michael Heimlich;Anand K. Verma\",\"doi\":\"10.1109/JETCAS.2023.3340957\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work reports three designs of transverse resonance (TR)-based high-performance compact 5-pole Butterworth low-pass filters (TR-LPFs) at the cut-off frequency (\\n<inline-formula> <tex-math>$f_{c}$ </tex-math></inline-formula>\\n) 10.5 GHz in \\n<inline-formula> <tex-math>$0.15~\\\\mu \\\\text{m}$ </tex-math></inline-formula>\\n Gallium Arsenide (GaAs) pHEMT technology, with a chip size of 0.82 mm \\n<inline-formula> <tex-math>$\\\\times0.87$ </tex-math></inline-formula>\\n mm. Two fabricated TR-LPFs have 20 dB, 30 dB, 40 dB, and 50 dB attenuation levels with rejection bandwidths of (54 GHz, 54 GHz), (32 GHz, 52 GHz), (31 GHz, 50 GHz), and (18.5 GHz, 27 GHz) respectively, and insertion loss of 0.5 dB and 0.6 dB. The TR-LPF is a microstrip-based design, so unlike the lumped elements-based design, it could be designed and fabricated in the GaAs, and other technologies even at millimeter-wave frequencies. Such high performance LPF, using microstrip on a GaAs chip is not reported in the open literature.\",\"PeriodicalId\":48827,\"journal\":{\"name\":\"IEEE Journal on Emerging and Selected Topics in Circuits and Systems\",\"volume\":\"14 1\",\"pages\":\"19-29\"},\"PeriodicalIF\":3.7000,\"publicationDate\":\"2023-12-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal on Emerging and Selected Topics in Circuits and Systems\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10348552/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal on Emerging and Selected Topics in Circuits and Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10348552/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

这项工作报告了三种基于横向谐振（TR）的高性能紧凑型 5 极巴特沃斯低通滤波器（TR-LPF）的设计，其截止频率（$f_{c}$ ）为 10.5 GHz，采用 0.15~\mu \text{m}$ 的砷化镓（GaAs）pHEMT 技术，芯片尺寸为 0.82 mm $\times0.87$ mm。制造的两个 TR-LPF 衰减水平分别为 20 dB、30 dB、40 dB 和 50 dB，抑制带宽分别为（54 GHz、54 GHz）、（32 GHz、52 GHz）、（31 GHz、50 GHz）和（18.5 GHz、27 GHz），插入损耗分别为 0.5 dB 和 0.6 dB。TR-LPF 是一种基于微带的设计，因此与基于叠加元件的设计不同，它甚至可以在毫米波频率下使用砷化镓和其他技术进行设计和制造。这种在砷化镓芯片上使用微带的高性能 LPF 在公开文献中尚未见报道。

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Compact Transverse-Resonance Low-Pass Filter With Wide Stop-Band Rejection Implemented in Gallium Arsenide Technology

This work reports three designs of transverse resonance (TR)-based high-performance compact 5-pole Butterworth low-pass filters (TR-LPFs) at the cut-off frequency (

$f_{c}$

) 10.5 GHz in

$0.15~\mu \text{m}$

Gallium Arsenide (GaAs) pHEMT technology, with a chip size of 0.82 mm

$\times0.87$

mm. Two fabricated TR-LPFs have 20 dB, 30 dB, 40 dB, and 50 dB attenuation levels with rejection bandwidths of (54 GHz, 54 GHz), (32 GHz, 52 GHz), (31 GHz, 50 GHz), and (18.5 GHz, 27 GHz) respectively, and insertion loss of 0.5 dB and 0.6 dB. The TR-LPF is a microstrip-based design, so unlike the lumped elements-based design, it could be designed and fabricated in the GaAs, and other technologies even at millimeter-wave frequencies. Such high performance LPF, using microstrip on a GaAs chip is not reported in the open literature.

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来源期刊

IEEE Journal on Emerging and Selected Topics in Circuits and Systems ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

8.50

自引率

2.20%

发文量

期刊介绍： The IEEE Journal on Emerging and Selected Topics in Circuits and Systems is published quarterly and solicits, with particular emphasis on emerging areas, special issues on topics that cover the entire scope of the IEEE Circuits and Systems (CAS) Society, namely the theory, analysis, design, tools, and implementation of circuits and systems, spanning their theoretical foundations, applications, and architectures for signal and information processing.