硫化亚锡（II）纳米晶薄膜的低温一锅法合成

IF 1.8 3区化学 Q3 CHEMISTRY, INORGANIC & NUCLEAR

Russian Journal of Inorganic Chemistry Pub Date : 2024-03-11 DOI:10.1134/s0036023623602738

N. S. Kozhevnikova, L. N. Maskaeva, A. N. Enyashin, O. A. Lipina, A. P. Tyutyunnnik, I. O. Selyanin, I. V. Baklanova, M. V. Kuznetsov, V. F. Markov

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引用次数: 0

摘要

摘要利用一锅法，按照绿色化学原理制造出了带隙为 1.03 ± 0.09 eV 的光敏对型硫化锡（II）半导体薄膜。为了扩大适用于纳米结构 SnS 薄膜化学沉积的硫化剂范围，研究人员展示了使用硫代硫酸钠溶液的效率。研究发现，通过水解分解硫代硫酸根离子，可以合成与介电基底有良好附着力、相干散射区尺寸为 ⁓30 nm 的 SnS 薄膜。离子平衡的热力学分析证明了合成 SnS 的条件。量子化学计算表明，合成的 SnS 薄膜的 p 型导电性很可能是由于锡空位造成的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Low-Temperature One-Pot Synthesis of Tin(II) Sulfide Nanocrystalline Thin Films

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Low-Temperature One-Pot Synthesis of Tin(II) Sulfide Nanocrystalline Thin Films

Abstract

Photosensitive semiconducting p-type tin(II) sulfide thin films with a band gap of 1.03 ± 0.09 eV have been manufactured in compliance with green chemistry principles using the one-pot approach. To extend the range of sulfidizers suitable for chemical deposition of thin nanostructured SnS films, the efficiency of using sodium thiosulfate solutions has been shown. It has been found that thin SnS films with good adhesion to a dielectric substrate and a coherent scattering region size of ⁓30 nm can be synthesized through hydrolytic decomposition of thiosulfate ions. The conditions for synthesis of SnS have been justified by thermodynamic analysis of ionic equilibria. Quantum-chemical calculations have shown that the p-type conductivity of the synthesized SnS films is most likely due to tin vacancies.

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来源期刊

Russian Journal of Inorganic Chemistry 化学-无机化学与核化学

CiteScore

3.10

自引率

38.10%

发文量

237

审稿时长

3 months

期刊介绍： Russian Journal of Inorganic Chemistry is a monthly periodical that covers the following topics of research: the synthesis and properties of inorganic compounds, coordination compounds, physicochemical analysis of inorganic systems, theoretical inorganic chemistry, physical methods of investigation, chemistry of solutions, inorganic materials, and nanomaterials.