Double channeled nanotube gate all around field effect transistor with drive current boosted

Gate all around field effect transistor (GAAFET) presents a resurgence ascribed to its enhanced gate electrostatic controllability by virtue of surrounding gate structure in coping with increasingly serious power consumption dissipation and short channel effects (SCE) degradation as the semiconductor technology enters into sub-10 nm technology node. Nanotube GAAFET (NT GAAFET) with inner and outer channels surrounded by inner and outer gates proves to be superior than nanowire GAAFET in drive current (I_on) augmentation and SCEs inhibition attributed to enhanced gate electrostatic integrity, holding promise to expand the Moore's law Roadmap further beyond. Herein, we demonstrate a doubled-channeled NT GAAFET (DC NT GAAFET) structure with I_on (total value) boost in comparison with NT GAAFET and NW GAAFET with the same footprint. I_on gains of 64.8% and 1.7 times have been obtained in DC NT GAAFET in compared with NT GAAFET and NW GAAFET. I_off (total value) of DC NT GAAFET degrades by 61.8% than that of NT GAAFET. Whereas SS and I_on/I_off ratio are almost comparable in DC NT GAAFET and NT GAAFET, indicating the sustained superior gate electrostatic controllability in DC NT GAAFET with respect to NT GAAFET regardless of additional channel incorporated. On the other side, both DC NT GAAFET and NT GAAFET exhibit superior device performance than NW GAAFET in terms of high operation speed and better electrostatic controllability manifested by suppressed SCEs.