根据入射光的特性优化硅光电二极管上的单层抗反射 SiO $${}_\mathbf{2}}$ 涂层厚度

IF 0.5 Q4 PHYSICS, MULTIDISCIPLINARY
A. V. Timofeev, A. I. Mil’shtein, D. N. Grigor’ev
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引用次数: 0

摘要

摘要 理论研究了硅光电二极管上一层抗反射 SiO\({}_{2}\) 涂层的最佳厚度对光电二极管入射光特性的依赖性。研究表明,与厚度为 \(\lambda/4n\)的经典单层抗反射涂层相比,不同强度角度分布的单层抗反射 SiO\({}_{2}\) 涂层的最佳厚度可将光电二极管的量子效率提高 1.1 倍,而后者在单色光正常入射的情况下是最佳的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Optimization of The Thickness of Single-Layer Antireflection SiO $${}_{\mathbf{2}}$$ Coating on a Silicon Photodiode Depending of the Characteristics of Incident Light

Optimization of The Thickness of Single-Layer Antireflection SiO $${}_{\mathbf{2}}$$ Coating on a Silicon Photodiode Depending of the Characteristics of Incident Light

Abstract

Theoretical investigations of the dependence of the optimal thickness of a one-layer antireflection SiO\({}_{2}\) coating on a silicon photodiode on the characteristics of the light incident to the photodiode. It is shown that the optimal thickness of the one-layer antireflection SiO\({}_{2}\) coating for different angular distributions of intensity increases the quantum efficiency of the photodiode by up to 1.1 times in comparison with the classical one-layer antireflection coating with a thickness \(\lambda/4n\), which is optimal in the case of the normal incidence of monochromatic light.

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来源期刊
CiteScore
1.00
自引率
50.00%
发文量
16
期刊介绍: The scope of Optoelectronics, Instrumentation and Data Processing encompasses, but is not restricted to, the following areas: analysis and synthesis of signals and images; artificial intelligence methods; automated measurement systems; physicotechnical foundations of micro- and optoelectronics; optical information technologies; systems and components; modelling in physicotechnical research; laser physics applications; computer networks and data transmission systems. The journal publishes original papers, reviews, and short communications in order to provide the widest possible coverage of latest research and development in its chosen field.
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