Assessment of BTI-induced deterioration in vacuum based undoped structure

In this paper, an assessment of bias temperature instability (BTI) in $\text{high}-\kappa /\text{vacuum}$ based dual gate dopingless JLFET (HKV-DLJLFET) is carried out at 15 nm technology node. For this, the gate dielectric of HKV-DGDLJLFET is made of asymmetric combination of $\text{high}-\kappa$ $\left({\mathrm{hfO}}_2\right)$ and vacuum dielectrics near the source/drain (S/D) side, which significantly minimizes the leakage current and enhances the reliability. Our simulation study have shown that the n-type HKV-DGDLJLFET exhibits 2.28 and 2.45 times less deterioration in drain current $\left(I_D\right)$ and transconductance $\left(g_m\right)$ respectively, than n-type HKV-DGJLFET due to positive BTI (PBTI) for 2000 seconds at ${150}^{o}C$. Further, we have found that n-type HKV-DGDLJLFET has less deterioration in $V_{\mathrm{th}}$ and $g_m$ due to BTI stress for different time spans. Hence, adding vacuum dielectric to the drain side lowers the BTI stress at high temperatures and makes it last longer.