用于干电极穿戴式脑电图记录的 800MΩ 输入阻抗 95.3dB-DR Δ-ΔΣ AFE。

Yuying Li, Yijie Li, Hao Li, Zhiliang Hong, Jiawei Xu
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引用次数: 0

摘要

非侵入式闭环大脑调控为评估和调节人的精神和身体健康(如帕金森病、癫痫和睡眠障碍)提供了一种方便且经济有效的方法。然而,可穿戴脑电图系统对模拟前端(AFE)电路提出了巨大挑战,因为它需要μV级的脑电信号、多种干扰源和不明确的皮肤接触。本文介绍了一种专为干电极头皮脑电图记录量身定制的直接数字化模拟前端,具有宽输入动态范围(DR)和高输入阻抗的特点。AFE 采用二阶 5 位Δ-Δ sigma(Δ-ΔΣ)模数转换器,在保持高精度的同时,还能消除直流电极偏移(DEO)和低频干扰。ADC 中嵌入的非反相伪差分仪表放大器 (IA) 可确保高输入阻抗 (Zin) 和共模抑制比 (CMRR)。AFE 采用标准 0.18μm CMOS 工艺制造,在 50 Hz 时具有 700 mVpp 输入信号范围、95.3dB DR、87dB SNDR 和 800-MΩ 输入阻抗,1.2 V 电源功耗为 88.4μW。干电极 EEG 测量验证了高 DR 和高输入阻抗的优势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An 800MΩ-Input-Impedance 95.3dB-DR Δ-ΔΣ AFE for Dry-Electrode Wearable EEG Recording.

Non-invasive, closed-loop brain modulation offers an accessible and cost-effective means of evaluating and modulating one's mental and physical well-being, such as Parkinson's disease, epilepsy, and sleep disorders. However, wearable EEG systems pose significant challenges for the analog front-end (AFE) circuits in view of μV-level EEG signals of interest, multiple sources of interference, and ill-defined skin contact. This paper presents a direct-digitization AFE tailored for dry-electrode scalp EEG recording, characterized by wide input dynamic range (DR) and high input impedance. The AFE utilizes a second-order 5-bit delta-delta sigma (Δ-ΔΣ) ADC to shape DC electrode offset (DEO) and low-frequency disturbances while retaining high accuracy. A non-inverting pseudo-differential instrumentation amplifier (IA) embedded in the ADC ensures high input impedance (Zin) and common-mode rejection ratio (CMRR). Fabricated in a standard 0.18-μm CMOS process, the AFE delivers 700-mVpp input signal range, 95.3-dB DR, 87-dB SNDR, and 800-MΩ input impedance at 50 Hz while consuming 88.4μW from a 1.2 V supply. The benefits of high DR and high input impedance have been validated by dry-electrode EEG measurement.

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