氧化石墨烯:合成与激光光谱学方法

Q2 Engineering
Diaa Atta , Ahmed Refaat , Adel Ashery , Medhat Ibrahim
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引用次数: 0

摘要

纳米技术研究推动了材料和工业应用的发展,如纳米电子学、医学科学、燃料、生物学和技术创新。最常用的纳米材料是氧化石墨烯 (GO),它已被视为许多特殊行业的主导原料。目前的工作旨在建立一种新的、具有成本效益的、简单易行的 GO 合成方法。在表征过程中使用了激光光谱甚至传统工具。所制备的 GO 已通过 XRD 和 FT-IR 光谱进行了确认。基于共焦显微镜的激光光谱法,如拉曼显微光谱法和荧光寿命成像显微镜(FLIM),已被用来确保 GO 的合成。此外,它还有助于检测制备层的厚度。拉曼光谱可以检测到 GO 的层数,平均为一层,而拉曼图谱则显示了 GO 在基底上的良好分布。在 445 nm 脉冲激光的激发下,FLIM 显示单层 GO 覆盖了大部分表面,只有极小的区域含有超过单层的 GO。这项工作的新颖之处在于制备方法以及利用 FLIM 和拉曼检测 GO 层数的方法。制备的 GO 可用于太阳能电池和过滤等多种应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Graphene oxide: Synthesis and laser spectroscopy approach

Graphene oxide: Synthesis and laser spectroscopy approach

Nanotechnology research offers advancements in materials and industrial uses such as nano-electronics, medical sciences, fuel, biology, and technological innovation. The most often employed nanomaterial is Graphene oxide (GO), which has been regarded as a dominant progenitor for many specialized industries. The current work aims to establish a new, cost-effective, easy, and straightforward GO synthesis method. Laser spectroscopy and even traditional tools have been utilized for characterization. The prepared GO has been confirmed by XRD and FT-IR spectroscopy. Laser spectroscopy based on confocal microscopes like Raman micro-spectroscopy and fluorescence lifetime imaging microscopy (FLIM) has been used to ensure the synthesis of GO. Also, it could help in the detection of the prepared layer thickness. Raman spectroscopy detects the number of GO layers, which is one on average, while the Raman mapping shows a good distribution of GO on the substrate. Based on excitation with a 445 nm pulsed laser, FLIM shows that mono GO layers cover most of the surface while only a tiny area contains more than a single layer. The novel aspect of this work is the method of preparation and the way of utilizing both FLIM and Raman to detect the number of GO layers. The prepared GO could be used in many applications like solar cells and filtration.

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来源期刊
Optical Materials: X
Optical Materials: X Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
73
审稿时长
91 days
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