Al2O3 厚度和氧化剂前驱体对 Al2O3/GaN 结构中界面成分和污染的影响

IF 1.6 4区化学 Q4 CHEMISTRY, PHYSICAL

Surface and Interface Analysis Pub Date : 2024-03-04 DOI:10.1002/sia.7299

Tarek Spelta, Eugénie Martinez, Marc Veillerot, Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Bassem Salem, Bérangère Hyot

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引用次数: 0

摘要

本文采用飞行时间二次离子质谱法（ToF-SIMS）和硬 X 射线光电子能谱法（HAXPES）研究了下一代氮化镓（GaN）晶体管的 Al2O3/GaN 临界埋藏界面。结果表明，当 Al2O3 的厚度从 3 纳米增加到 20 纳米时，该界面上的镓氧化作用会增强。与 Al2O3 生长过程中仅使用 H2O 相比，同时使用 O3 和 H2O 作为氧化剂前驱体时，镓的氧化作用会减弱。此外，基于 O3/H2O 的 Al2O3 有利于减少氢和碳等污染物，但会增加 Al2O3/GaN 界面的卤化物（Cl- 和 F-）。

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Effect of Al2O3 thickness and oxidant precursors on the interface composition and contamination in Al2O3/GaN structures

In this paper, we investigate the Al2O3/GaN critical buried interface of the next generation of gallium nitride (GaN)‐based transistors using time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) and hard X‐ray photoelectron spectroscopy (HAXPES). Results highlight that gallium oxidation at this interface is enhanced when increasing the Al2O3 thickness from 3 up to 20 nm. Gallium oxidation is reduced when using both O3 and H2O as oxidant precursors, compared with only H2O during the growth of Al2O3. In addition, the O3/H2O‐based Al2O3 favors a reduction of contaminants such as hydrogen and carbon but enhances the presence of halides (Cl− and F−) at this Al2O3/GaN interface.

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来源期刊

Surface and Interface Analysis 化学-物理化学

CiteScore

3.30

自引率

5.90%

发文量

130

审稿时长

4.4 months

期刊介绍： Surface and Interface Analysis is devoted to the publication of papers dealing with the development and application of techniques for the characterization of surfaces, interfaces and thin films. Papers dealing with standardization and quantification are particularly welcome, and also those which deal with the application of these techniques to industrial problems. Papers dealing with the purely theoretical aspects of the technique will also be considered. Review articles will be published; prior consultation with one of the Editors is advised in these cases. Papers must clearly be of scientific value in the field and will be submitted to two independent referees. Contributions must be in English and must not have been published elsewhere, and authors must agree not to communicate the same material for publication to any other journal. Authors are invited to submit their papers for publication to John Watts (UK only), Jose Sanz (Rest of Europe), John T. Grant (all non-European countries, except Japan) or R. Shimizu (Japan only).