Tarek Spelta, Eugénie Martinez, Marc Veillerot, Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Bassem Salem, Bérangère Hyot
{"title":"Al2O3 厚度和氧化剂前驱体对 Al2O3/GaN 结构中界面成分和污染的影响","authors":"Tarek Spelta, Eugénie Martinez, Marc Veillerot, Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Bassem Salem, Bérangère Hyot","doi":"10.1002/sia.7299","DOIUrl":null,"url":null,"abstract":"In this paper, we investigate the Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/GaN critical buried interface of the next generation of gallium nitride (GaN)‐based transistors using time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) and hard X‐ray photoelectron spectroscopy (HAXPES). Results highlight that gallium oxidation at this interface is enhanced when increasing the Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thickness from 3 up to 20 nm. Gallium oxidation is reduced when using both O<jats:sub>3</jats:sub> and H<jats:sub>2</jats:sub>O as oxidant precursors, compared with only H<jats:sub>2</jats:sub>O during the growth of Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>. In addition, the O<jats:sub>3</jats:sub>/H<jats:sub>2</jats:sub>O‐based Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> favors a reduction of contaminants such as hydrogen and carbon but enhances the presence of halides (Cl<jats:sup>−</jats:sup> and F<jats:sup>−</jats:sup>) at this Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/GaN interface.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2024-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Al2O3 thickness and oxidant precursors on the interface composition and contamination in Al2O3/GaN structures\",\"authors\":\"Tarek Spelta, Eugénie Martinez, Marc Veillerot, Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Bassem Salem, Bérangère Hyot\",\"doi\":\"10.1002/sia.7299\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we investigate the Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/GaN critical buried interface of the next generation of gallium nitride (GaN)‐based transistors using time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) and hard X‐ray photoelectron spectroscopy (HAXPES). Results highlight that gallium oxidation at this interface is enhanced when increasing the Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> thickness from 3 up to 20 nm. Gallium oxidation is reduced when using both O<jats:sub>3</jats:sub> and H<jats:sub>2</jats:sub>O as oxidant precursors, compared with only H<jats:sub>2</jats:sub>O during the growth of Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>. In addition, the O<jats:sub>3</jats:sub>/H<jats:sub>2</jats:sub>O‐based Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> favors a reduction of contaminants such as hydrogen and carbon but enhances the presence of halides (Cl<jats:sup>−</jats:sup> and F<jats:sup>−</jats:sup>) at this Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/GaN interface.\",\"PeriodicalId\":1,\"journal\":{\"name\":\"Accounts of Chemical Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":16.4000,\"publicationDate\":\"2024-03-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Accounts of Chemical Research\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://doi.org/10.1002/sia.7299\",\"RegionNum\":1,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1002/sia.7299","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Effect of Al2O3 thickness and oxidant precursors on the interface composition and contamination in Al2O3/GaN structures
In this paper, we investigate the Al2O3/GaN critical buried interface of the next generation of gallium nitride (GaN)‐based transistors using time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) and hard X‐ray photoelectron spectroscopy (HAXPES). Results highlight that gallium oxidation at this interface is enhanced when increasing the Al2O3 thickness from 3 up to 20 nm. Gallium oxidation is reduced when using both O3 and H2O as oxidant precursors, compared with only H2O during the growth of Al2O3. In addition, the O3/H2O‐based Al2O3 favors a reduction of contaminants such as hydrogen and carbon but enhances the presence of halides (Cl− and F−) at this Al2O3/GaN interface.
期刊介绍:
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.