多铁性 BaTiO3/La0.9Ba0.1MnO3 中磁电耦合的直接成像

F. Stramaglia, G. Panchal, L. Tovaglieri, C. Lichtensteiger, F. Nolting, C. Vaz
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引用次数: 0

摘要

我们报告了在 BaTiO3/La0.9Ba0.1MnO3 多铁电体异质结构中,利用 x 射线光发射电子显微镜 (XPEEM) 直接成像 4.8 nm La0.9Ba0.1MnO3 薄膜对施加在 5 nm BaTiO3 薄膜上的电压的磁响应。具体来说,我们用原子力显微镜在接触模式下在 BaTiO3 层上写入了方形铁电畴,并通过 Mn L 边的 X 射线圆二色效应,用 XPEEM 以高空间横向分辨率对相应的磁对比进行了成像。我们发现,当正写入电压超过 +6 V 时,磁对比度会突然下降,这与 BaTiO3 的铁电极化切换有关,这与通过改变 BaTiO3/La0.9Ba0.1MnO3 界面的空穴载流子密度而产生的磁电效应是一致的。随温度变化的测量结果表明,在施加 +6 V 以上正电压的区域,居里温度和磁矩都有所下降,这与空穴耗尽态相对应,并表明块体 La0.9Ba0.1MnO3 开始进入自旋倾斜态。我们的研究结果是对此类多铁性异质结构中磁电耦合的首次直接成像。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Direct imaging of the magnetoelectric coupling in multiferroic BaTiO3/La0.9Ba0.1MnO3
We report the direct imaging of the magnetic response of a 4.8 nm La0.9Ba0.1MnO3 film to the voltage applied across a 5 nm BaTiO3 film in a BaTiO3/La0.9Ba0.1MnO3 multiferroic heterostructure using x-ray photoemission electron microscopy (XPEEM). Specifically, we have written square ferroelectric domains on the BaTiO3 layer with an atomic force microscope in contact mode and imaged the corresponding magnetic contrast through the x-ray circular dichroic effect at the Mn L-edge with high spatial lateral resolution using XPEEM. We find a sudden decrease in the magnetic contrast for positive writing voltages above +6 V associated with the switching of the ferroelectric polarization of the BaTiO3, consistent with the presence of a magnetoelectric effect through changes in the hole carrier density at the BaTiO3/La0.9Ba0.1MnO3 interface. Temperature-dependent measurements show a decrease in the Curie temperature and magnetic moment in the areas where a positive voltage above +6 V was applied, corresponding to the hole depletion state and suggesting the onset of a spin-canted state of bulk La0.9Ba0.1MnO3. Our results are the first direct imaging of magnetoelectric coupling in such multiferroic heterostructure.
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