Roberto Jakomin, S. Rampino, G. Spaggiari, Michele Casappa, Giovanna Trevisi, Elena Del Canale, Enos Gombia, M. Bronzoni, Kodjo Kekeli Sossoe, Francesco Mezzadri, F. Pattini
{"title":"基于混合脉冲电子沉积/射频磁控溅射生长技术的掺铜 Sb2Se3 薄膜太阳能电池","authors":"Roberto Jakomin, S. Rampino, G. Spaggiari, Michele Casappa, Giovanna Trevisi, Elena Del Canale, Enos Gombia, M. Bronzoni, Kodjo Kekeli Sossoe, Francesco Mezzadri, F. Pattini","doi":"10.3390/solar4010004","DOIUrl":null,"url":null,"abstract":"In recent years, research attention has increasingly focused on thin-film photovoltaics utilizing Sb2Se3 as an ideal absorber layer. This compound is favored due to its abundance, non-toxic nature, long-term stability, and the potential to employ various cost-effective and scalable vapor deposition (PVD) routes. On the other hand, improving passivation, surface treatment and p-type carrier concentration is essential for developing high-performance and commercially viable Sb2Se3 solar cells. In this study, Cu-doped Sb2Se3 solar devices were fabricated using two distinct PVD techniques, pulsed electron deposition (PED) and radio frequency magnetron sputtering (RFMS). Furthermore, 5%Cu:Sb2Se3 films grown via PED exhibited high open-circuit voltages (VOC) of around 400 mV but very low short-circuit current densities (JSC). Conversely, RFMS-grown Sb2Se3 films resulted in low VOC values of around 300 mV and higher JSC. To enhance the photocurrent, we employed strategies involving a thin NaF layer to introduce controlled local doping at the back interface and a bilayer p-doped region grown sequentially using PED and RFMS. The optimized Sb2Se3 bilayer solar cell achieved a maximum efficiency of 5.25%.","PeriodicalId":517023,"journal":{"name":"Solar","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Cu-Doped Sb2Se3 Thin-Film Solar Cells Based on Hybrid Pulsed Electron Deposition/Radio Frequency Magnetron Sputtering Growth Techniques\",\"authors\":\"Roberto Jakomin, S. Rampino, G. Spaggiari, Michele Casappa, Giovanna Trevisi, Elena Del Canale, Enos Gombia, M. Bronzoni, Kodjo Kekeli Sossoe, Francesco Mezzadri, F. Pattini\",\"doi\":\"10.3390/solar4010004\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In recent years, research attention has increasingly focused on thin-film photovoltaics utilizing Sb2Se3 as an ideal absorber layer. This compound is favored due to its abundance, non-toxic nature, long-term stability, and the potential to employ various cost-effective and scalable vapor deposition (PVD) routes. On the other hand, improving passivation, surface treatment and p-type carrier concentration is essential for developing high-performance and commercially viable Sb2Se3 solar cells. In this study, Cu-doped Sb2Se3 solar devices were fabricated using two distinct PVD techniques, pulsed electron deposition (PED) and radio frequency magnetron sputtering (RFMS). Furthermore, 5%Cu:Sb2Se3 films grown via PED exhibited high open-circuit voltages (VOC) of around 400 mV but very low short-circuit current densities (JSC). Conversely, RFMS-grown Sb2Se3 films resulted in low VOC values of around 300 mV and higher JSC. To enhance the photocurrent, we employed strategies involving a thin NaF layer to introduce controlled local doping at the back interface and a bilayer p-doped region grown sequentially using PED and RFMS. The optimized Sb2Se3 bilayer solar cell achieved a maximum efficiency of 5.25%.\",\"PeriodicalId\":517023,\"journal\":{\"name\":\"Solar\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-02-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solar\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.3390/solar4010004\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3390/solar4010004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Cu-Doped Sb2Se3 Thin-Film Solar Cells Based on Hybrid Pulsed Electron Deposition/Radio Frequency Magnetron Sputtering Growth Techniques
In recent years, research attention has increasingly focused on thin-film photovoltaics utilizing Sb2Se3 as an ideal absorber layer. This compound is favored due to its abundance, non-toxic nature, long-term stability, and the potential to employ various cost-effective and scalable vapor deposition (PVD) routes. On the other hand, improving passivation, surface treatment and p-type carrier concentration is essential for developing high-performance and commercially viable Sb2Se3 solar cells. In this study, Cu-doped Sb2Se3 solar devices were fabricated using two distinct PVD techniques, pulsed electron deposition (PED) and radio frequency magnetron sputtering (RFMS). Furthermore, 5%Cu:Sb2Se3 films grown via PED exhibited high open-circuit voltages (VOC) of around 400 mV but very low short-circuit current densities (JSC). Conversely, RFMS-grown Sb2Se3 films resulted in low VOC values of around 300 mV and higher JSC. To enhance the photocurrent, we employed strategies involving a thin NaF layer to introduce controlled local doping at the back interface and a bilayer p-doped region grown sequentially using PED and RFMS. The optimized Sb2Se3 bilayer solar cell achieved a maximum efficiency of 5.25%.