退火对光伏用硒化锡薄膜光电特性的影响

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Chalcogenide Letters Pub Date : 2024-02-01 DOI:10.15251/cl.2024.212.125

M. Jabeen, N. Ali, Z. Ali, H. Ali, A. A. A. Bahajjaj, B. Haq, S.H. Kim

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引用次数: 0

摘要

在这项研究中，硒化锡（SnSe）是通过锡锭和硒粉的热蒸发制备的，然后在 250°C 的氩气惰性气氛中退火。两种样品分别用于表征沉积和退火。结构参数包括粒度、应变、位错密度和单位面积晶粒数，由 XRD 计算得出；光学特性包括带隙，由紫外-可见光谱提取得出。电学特性的测量采用了四种探针技术。

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The impact of annealing on the optoelectronic properties of tin selenide thin films for photovoltaics

In this study, Tin selenide (SnSe) was prepared via thermal evaporation from tin ingots and selenium powder followed by annealing at 250°C in an inert atmosphere of Argon gas. Two samples were used for characterization purposes, as-deposited and annealed. The structural parameters including particle size, strain, dislocation density, and number of crystallites per unit area were calculated from XRD while the optical properties including band gap were extracted from UV-visible spectroscopy. Four probe techniques were used to measure the electrical properties.

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来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.