在密闭空间通过磁控溅射硫化合成 WS2 超薄薄膜

Surfaces Pub Date : 2024-02-11 DOI:10.3390/surfaces7010008
Florinel Sava, I. Simandan, A. Buruiana, Amelia-Elena Bocirnea, Outman El Khouja, Teddy Tite, M. Zaki, C. Mihai, A. Velea
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引用次数: 0

摘要

在寻找适用于下一代电子和光电应用的先进材料的过程中,二硫化钨(WS2)超薄薄膜因其独特的性能而成为前景广阔的候选材料。然而,要在所需基底上直接获得 WS2,而无需进行转移,因为转移会产生额外的缺陷,这带来了许多挑战。本文旨在探索在密闭空间内通过物理气相沉积(PVD)和硫化合成 WS2 超薄薄膜的方法,以解决实际应用中薄膜形成所面临的挑战。钨和 WS2 的前驱层通过射频磁控溅射沉积。随后在一个封闭的小型石墨盒中进行硫化处理,生成 WS2 薄膜。利用 X 射线反射仪 (XRR)、X 射线衍射 (XRD)、拉曼光谱、扫描电子显微镜 (SEM) 和 X 射线光电子能谱 (XPS) 等技术对这些前驱层和硫化层的物理和化学特性进行了全面的表征。研究结果表明,由于所使用的前驱体不同,薄膜的厚度、结构取向和化学成分也有明显差异。特别是钨前驱体的硫化层显示出 WS2 晶体的优先取向,其 (00L) 平面平行于基底表面,但在较小的角度范围内偏离平行。这项研究强调了精确控制沉积和硫化参数的必要性,以便为特定技术应用定制 WS2 薄膜的特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis of WS2 Ultrathin Films by Magnetron Sputtering Followed by Sulfurization in a Confined Space
In the quest for advanced materials suitable for next-generation electronic and optoelectronic applications, tungsten disulfide (WS2) ultrathin films have emerged as promising candidates due to their unique properties. However, obtaining WS2 directly on the desired substrate, eliminating the need for transfer, which produces additional defects, poses many challenges. This paper aims to explore the synthesis of WS2 ultrathin films via physical vapor deposition (PVD) followed by sulfurization in a confined space, addressing the challenge of film formation for practical applications. Precursor layers of tungsten and WS2 were deposited by RF magnetron sputtering. Subsequent sulfurization treatments were conducted in a small, closed, graphite box to produce WS2 films. The physical and chemical properties of these precursor and sulfurized layers were thoroughly characterized using techniques such as X-ray reflectometry (XRR), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). The findings reveal notable distinctions in film thickness, structural orientation, and chemical composition, attributable to the different precursor used. Particularly, the sulfurized layers from the tungsten precursor exhibited a preferred orientation of WS2 crystallites with their (00L) planes parallel to the substrate surface, along with a deviation from parallelism in a small angular range. This study highlights the necessity of precise control over deposition and sulfurization parameters to tailor the properties of WS2 films for specific technological applications.
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