用于开发高质量全彩微型 LED 显示器的原子层沉积技术

Zijun Yan , Suyang Liu , Yue Sun , Rongxing Wu , Youqin Lin , Hao-Chung Kuo , Zhong Chen , Tingzhu Wu
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引用次数: 0

摘要

微型发光二极管(μLED)具有无与伦比的光电特性,是开发元宇宙相关技术的重要元件。通过量子点色彩转换层(QDs-CCL)工艺制造的微型发光二极管为实现全彩和超高品质的显示提供了一种经济高效的解决方案。然而,侧壁缺陷会严重影响芯片尺寸缩小后的μLED的光学和电学特性。此外,QDs 还因其固有特性而存在激发辐射低和工作稳定性差的问题。原子层沉积(ALD)是一种很有前途的化学表面处理技术,具有自限制特性,可以提高全彩色μLED器件的性能。在这篇综述中,我们探讨了最近有关 ALD 技术在全彩 μLED 器件制造方面的研究。我们详细讨论了 ALD 在修复 RGB 三色 μLED 芯片侧壁缺陷方面的重要贡献。此外,我们还探讨了 ALD 在保护 QDs 和制备高分辨率 CCLs 中的应用。最后,我们讨论了 ALD 在开发高分辨率全彩显示屏方面的未来前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Atomic layer deposition technology for the development of high-quality, full-colour micro-LED displays

Micro light-emitting diodes (μLEDs) with unparalleled photoelectric characteristics are essential components for developing metaverse-related technologies. Immersive displays require reducing the LED size to the micro- or sub-microscale while retaining optimal optoelectronic capabilities. μLEDs, fabricated through the quantum dots colour conversion layer (QDs-CCL) process, offer a cost-effective solution for achieving displays with full-colour and ultrahigh quality. However, the sidewall defects significantly affect the optical and electrical properties of μLEDs with reduced chip size. Furthermore, QDs suffer from low excitation radiation and inferior operational stability induced by their intrinsic properties. Atomic layer deposition (ALD) is a promising chemical surface treatment technique with self-limiting properties that can enhance full-colour μLED devices. In this review, we explore recent studies on ALD techniques for full-colour μLED device fabrication. We discuss in detail the significant contribution of ALD in repairing sidewall defects in RGB tricolour μLED chips. Moreover, we explore applications of ALD in the protection of QDs and preparation of high-resolution CCLs. Finally, we discuss future prospects of ALD in developing high-resolution, full-colour displays.

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