化学沉积法制备的掺杂 Ni+2 纳米晶 Bi2S3 薄膜的光学和电学特性

IF 1.2 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
M. A. Hussain, P. J. Saikia, S. R. Devi, L. R. Singh
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引用次数: 0

摘要

掺杂镍(Ni+2)的纳米晶 Bi2S3 薄膜是在 318K 的沉积温度下,从含有硝酸铋、乙二胺四乙酸(EDTA)和硫代乙酰胺的溶液中沉积到玻璃基底上的。通过紫外-可见透射光谱(UV-Vis)、扫描电子显微镜(SEM)、能量色散 X 射线(EDAX)和热电导率技术,研究了三种不同掺杂浓度下制备的掺镍 Bi2S3 薄膜的光学、表面形貌和电学特性。光带隙能在 2.32-2.43 eV 之间。扫描电镜图像显示,制备的薄膜连续、致密,在整个区域分布均匀。薄膜的导电率在 10-2 Ω-1 m-1 量级。根据热探针法测定,薄膜为 n 型。光电导研究表明,光电流随着掺杂镍浓度的增加而增加。由于光子的吸收,产生了自由电子-空穴对(EHP)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optical and electrical properties of Ni+2 doped nanocrystalline Bi2S3 thin films prepared by chemical bath deposition method
Nickel (Ni+2) doped nanocrystalline Bi2S3 thin films are deposited on the glass substrate from the solutions containing Bismuth Nitrate, Ethylenediamine Tetraacetic acid (EDTA) and Thioacetamide at a bath deposition temperature of 318K. The optical, surface morphological and electrical properties of Ni-doped Bi2S3 thin films prepared at three different doping concentration are investigate by using ultraviolet–visible transmission spectra (UV–Vis), Scanning electron microscopy (SEM), Energy Dispersive X-ray (EDAX) and thermo-e.m.f. techniques. The optical band gap energies are found in between 2.32-2.43 eV. The SEM images show that the prepared films are continuous, dense and distributed over the entire area with good uniformity. The electrical conductivity of the films are in the order of 10-2 Ω-1 m-1 . The films are n-type as determined from the Hot Probe method. Photoconductivity studies reveal that photocurrent increases with the increase in Ni doping concentrations. Due to the absorption of photons, free electron-hole pairs (EHP) are produce.
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来源期刊
Chalcogenide Letters
Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.80
自引率
20.00%
发文量
86
审稿时长
1 months
期刊介绍: Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.
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