柔性 CNT/硅压阻应变传感器对人体运动检测灵敏度的几何影响

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Syed Muzamil Ahmed, Norhayati Soin, Sharifah Fatmadiana Wan Muhamad Hatta, Yasmin Abdul Wahab
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引用次数: 0

摘要

开发灵活、灵敏度高、工作范围广的应变传感器对于医疗保健、人体运动、人机界面和机器人等应用至关重要。COMSOL 多物理场有限元建模软件用于模拟蛇形几何 CNT 硅基柔性压阻 (PZR) 应变传感器,该传感器具有不同的传感器线厚度 (LT)、线宽 (LW)、间距 (P) 和结构 (Str,其中 Str1 在 x 方向上为 P,Str2 在 y 方向上为 P)。研究了它们对机械和压阻特性的影响,应变范围从 0 到 100%。模拟和分析了所提出的模型传感器的响应,包括最大位移、冯-米塞斯应力和传感器灵敏度等多个变量。模拟研究得出的结论是,对于 Str1 结构,PZR 应变传感器的灵敏度最高(GF 120.50),而 PZR 应变传感器的灵敏度最低(GF 48.99),分别为 P(0.5 毫米)、LT(0.5 毫米)和 LW(1.5 毫米)。研究还发现,当 LW 增加时,Str1 PZR 应变传感器的灵敏度上升,而 P 和 LT 则下降。此外,Str2 结构中 P(0.5 毫米)、LT(0.5 毫米)和 LW(1 毫米)的 PZR 应变传感器灵敏度最高(GF 165.95),而所有 Str2 传感器中 P(1.5 毫米)、LT(0.5 毫米)和 LW(0.5 毫米)的 PZR 应变传感器灵敏度最低(GF 161.62)。因此,所建模的传感器可用作高灵敏度的 PZR 应变传感器,具有监测 0-100% 应变范围内各种人体运动的出色能力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Flexible CNT/silicon piezo-resistive strain sensors geometrical influences on sensitivity for human motion detection

Flexible CNT/silicon piezo-resistive strain sensors geometrical influences on sensitivity for human motion detection

Developing flexible, extremely sensitive strain sensors with a broad operating range is critical for applications such as healthcare, human motion, human–machine interface, and robotics. The COMSOL Multiphysics Finite Element Modeling software has been used to simulate serpentine geometry CNT-silicon-based flexible piezo-resistive (PZR) strain sensors with various sensor line thicknesses (LT), line widths (LW), pitches (P), and structures (Str whereby Str1 is P in the x-direction, and Str2 is P in the y-direction). Their effect on mechanical and piezo-resistive characteristics for strain ranging from 0 to 100% has been studied. The responses of the proposed modeled sensors have been simulated and analyzed in terms of numerous variables, including maximum displacement, von Mises stress, and sensor sensitivity. The simulation study concluded that for the Str1 structure, the PZR strain sensor with P (0.5 mm), LT (0.5 mm), and LW (1.5 mm) had the highest sensitivity (GF 120.50), while the PZR strain sensor with P (0.5 mm), LT (0.5 mm), and LW (1.5 mm) had the lowest sensitivity (GF 48.99). It is also found that the sensitivity of the Str1 PZR strain sensors rises when LW increases while P and LT decrease. Furthermore, the PZR strain sensor with P (0.5 mm), LT (0.5 mm), and LW (1 mm) of structure Str2 has the highest sensitivity (GF 165.95), and the PZR strain sensor with P (1.5 mm), LT (0.5 mm) and LW (0.5 mm) showed the lowest sensitivity (GF 161.62) among all the Str2 sensors, and it is revealed that the sensitivity increases with the decrease of P and LT while the effect of LT is not apparent. As a result, the modeled sensor can be employed as a highly sensitive PZR strain sensor with an excellent capability to monitor a wide range of human motions over the range of 0–100% strain.

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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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