{"title":"电感耦合等离子体蚀刻的电磁场功率和温度对蓝宝石基底图案均匀性的影响","authors":"G. Q. Xie, G. Jin, H. Y. Wang","doi":"10.1134/s1063774522600636","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract—</h3><p>Patterned sapphire substrate technology can improve the growth performance and luminous efficiency of light-emitting diodes. In this work, dry etching by inductively coupled plasma is studied and adjusted. The advantages of dry etching are good uniformity and high stability in a single chip. By changing the parameters of electromagnetic field power (etching power, bias power) and temperature, the influence of each parameter on uniformity and etching rate was studied. Controlling the power of inductively coupled plasma etching at a critical value of 1200 W can ensure stability at the maximum etching rate. The higher the temperature, the higher the pattern height and the smaller the bottom width. It is best to control the temperature around 13°C. By changing the etching power, bias power, and temperature, the bias power was found to have a greater impact on the uniformity. If it is too large, the uniformity will become worse.</p>","PeriodicalId":527,"journal":{"name":"Crystallography Reports","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2024-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of Electromagnetic Field Power and Temperature of Inductively Coupled Plasma Etching on the Uniformity of a Patterned Sapphire Substrate\",\"authors\":\"G. Q. Xie, G. Jin, H. Y. Wang\",\"doi\":\"10.1134/s1063774522600636\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract—</h3><p>Patterned sapphire substrate technology can improve the growth performance and luminous efficiency of light-emitting diodes. In this work, dry etching by inductively coupled plasma is studied and adjusted. The advantages of dry etching are good uniformity and high stability in a single chip. By changing the parameters of electromagnetic field power (etching power, bias power) and temperature, the influence of each parameter on uniformity and etching rate was studied. Controlling the power of inductively coupled plasma etching at a critical value of 1200 W can ensure stability at the maximum etching rate. The higher the temperature, the higher the pattern height and the smaller the bottom width. It is best to control the temperature around 13°C. By changing the etching power, bias power, and temperature, the bias power was found to have a greater impact on the uniformity. If it is too large, the uniformity will become worse.</p>\",\"PeriodicalId\":527,\"journal\":{\"name\":\"Crystallography Reports\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-02-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Crystallography Reports\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063774522600636\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystallography Reports","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1134/s1063774522600636","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
摘要
摘要-图案化蓝宝石衬底技术可以提高发光二极管的生长性能和发光效率。本文对电感耦合等离子体干法刻蚀进行了研究和调整。干法刻蚀的优点是在单个芯片中具有良好的均匀性和较高的稳定性。通过改变电磁场功率(蚀刻功率、偏置功率)和温度参数,研究了各参数对均匀性和蚀刻速率的影响。将电感耦合等离子体刻蚀的功率控制在 1200 W 的临界值,可确保最大刻蚀速率下的稳定性。温度越高,图案高度越高,底部宽度越小。最好将温度控制在 13°C 左右。通过改变蚀刻功率、偏置功率和温度,发现偏置功率对均匀性的影响更大。如果偏置功率过大,均匀性会变差。
Influence of Electromagnetic Field Power and Temperature of Inductively Coupled Plasma Etching on the Uniformity of a Patterned Sapphire Substrate
Abstract—
Patterned sapphire substrate technology can improve the growth performance and luminous efficiency of light-emitting diodes. In this work, dry etching by inductively coupled plasma is studied and adjusted. The advantages of dry etching are good uniformity and high stability in a single chip. By changing the parameters of electromagnetic field power (etching power, bias power) and temperature, the influence of each parameter on uniformity and etching rate was studied. Controlling the power of inductively coupled plasma etching at a critical value of 1200 W can ensure stability at the maximum etching rate. The higher the temperature, the higher the pattern height and the smaller the bottom width. It is best to control the temperature around 13°C. By changing the etching power, bias power, and temperature, the bias power was found to have a greater impact on the uniformity. If it is too large, the uniformity will become worse.
期刊介绍:
Crystallography Reports is a journal that publishes original articles short communications, and reviews on various aspects of crystallography: diffraction and scattering of X-rays, electrons, and neutrons, determination of crystal structure of inorganic and organic substances, including proteins and other biological substances; UV-VIS and IR spectroscopy; growth, imperfect structure and physical properties of crystals; thin films, liquid crystals, nanomaterials, partially disordered systems, and the methods of studies.