{"title":"胶体量子点上的平面阳离子钝化实现了高性能 0.35-1.8 μm 宽带 TFT 成像仪。","authors":"Yuxuan Liu, Jing Liu, Chengjie Deng, Bo Wang, Bing Xia, Xinyi Liang, Yang Yang, Shengman Li, Xihua Wang, Luying Li, Xinzheng Lan, Peng Fei, Jianbing Zhang, Liang Gao, Jiang Tang","doi":"10.1002/adma.202313811","DOIUrl":null,"url":null,"abstract":"<p>Solution-processed colloidal quantum dots (CQDs) are promising candidates for broadband photodetectors from visible light to shortwave infrared (SWIR). However, large-size PbS CQDs sensitive to longer SWIR are mainly exposed with nonpolar (100) facets on the surface, which lack robust passivation strategies. Herein, an innovative passivation strategy that employs planar cation, is introduced to enable face-to-face coupling on (100) facets and strengthen halide passivation on (111) facets. The defect density of CQDs film (E<sub>g</sub> ≈ 0.74 eV) is reduced from 2.74 × 10<sup>15</sup> to 1.04 × 10<sup>15</sup> cm<sup>−3</sup>, coupled with 0.1 eV reduction in the activation energy of defects. The resultant CQDs photodiodes exhibit a low dark current density of 14 nA cm<sup>−2</sup> with a high external quantum efficiency (EQE) of 62%, achieving a linear dynamic range of 98 dB, a −3dB bandwidth of 103 kHz and a detectivity of 4.7 × 10<sup>11</sup> Jones. The comprehensive performance of the CQDs photodiodes outperforms previously reported CQDs photodiodes operating at >1.6 µm. By monolithically integrated with thin-film transistor (TFT) readout circuit, the broadband CQDs imager covering 0.35-1.8 µm realizes the functions including silicon wafer perspectivity and material discrimination, showing its potential for wide range of applications.</p>","PeriodicalId":114,"journal":{"name":"Advanced Materials","volume":null,"pages":null},"PeriodicalIF":27.4000,"publicationDate":"2024-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Planar Cation Passivation on Colloidal Quantum Dots Enables High-Performance 0.35–1.8 µm Broadband TFT Imager\",\"authors\":\"Yuxuan Liu, Jing Liu, Chengjie Deng, Bo Wang, Bing Xia, Xinyi Liang, Yang Yang, Shengman Li, Xihua Wang, Luying Li, Xinzheng Lan, Peng Fei, Jianbing Zhang, Liang Gao, Jiang Tang\",\"doi\":\"10.1002/adma.202313811\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Solution-processed colloidal quantum dots (CQDs) are promising candidates for broadband photodetectors from visible light to shortwave infrared (SWIR). However, large-size PbS CQDs sensitive to longer SWIR are mainly exposed with nonpolar (100) facets on the surface, which lack robust passivation strategies. Herein, an innovative passivation strategy that employs planar cation, is introduced to enable face-to-face coupling on (100) facets and strengthen halide passivation on (111) facets. The defect density of CQDs film (E<sub>g</sub> ≈ 0.74 eV) is reduced from 2.74 × 10<sup>15</sup> to 1.04 × 10<sup>15</sup> cm<sup>−3</sup>, coupled with 0.1 eV reduction in the activation energy of defects. The resultant CQDs photodiodes exhibit a low dark current density of 14 nA cm<sup>−2</sup> with a high external quantum efficiency (EQE) of 62%, achieving a linear dynamic range of 98 dB, a −3dB bandwidth of 103 kHz and a detectivity of 4.7 × 10<sup>11</sup> Jones. The comprehensive performance of the CQDs photodiodes outperforms previously reported CQDs photodiodes operating at >1.6 µm. By monolithically integrated with thin-film transistor (TFT) readout circuit, the broadband CQDs imager covering 0.35-1.8 µm realizes the functions including silicon wafer perspectivity and material discrimination, showing its potential for wide range of applications.</p>\",\"PeriodicalId\":114,\"journal\":{\"name\":\"Advanced Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":27.4000,\"publicationDate\":\"2024-02-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/adma.202313811\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/adma.202313811","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Solution-processed colloidal quantum dots (CQDs) are promising candidates for broadband photodetectors from visible light to shortwave infrared (SWIR). However, large-size PbS CQDs sensitive to longer SWIR are mainly exposed with nonpolar (100) facets on the surface, which lack robust passivation strategies. Herein, an innovative passivation strategy that employs planar cation, is introduced to enable face-to-face coupling on (100) facets and strengthen halide passivation on (111) facets. The defect density of CQDs film (Eg ≈ 0.74 eV) is reduced from 2.74 × 1015 to 1.04 × 1015 cm−3, coupled with 0.1 eV reduction in the activation energy of defects. The resultant CQDs photodiodes exhibit a low dark current density of 14 nA cm−2 with a high external quantum efficiency (EQE) of 62%, achieving a linear dynamic range of 98 dB, a −3dB bandwidth of 103 kHz and a detectivity of 4.7 × 1011 Jones. The comprehensive performance of the CQDs photodiodes outperforms previously reported CQDs photodiodes operating at >1.6 µm. By monolithically integrated with thin-film transistor (TFT) readout circuit, the broadband CQDs imager covering 0.35-1.8 µm realizes the functions including silicon wafer perspectivity and material discrimination, showing its potential for wide range of applications.
期刊介绍:
Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.