以钛和钽箔为支撑的 CNTS 薄膜电化学合成的具体特点

IF 1.1 4区 工程技术 Q4 ELECTROCHEMISTRY
V. V. Rakitin, L. S. Feoktistova, M. V. Gapanovich, A. V. Stanchik, D. M. Sedlovets
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引用次数: 0

摘要

摘要 通过相应电解质溶液的循环伏安法,研究了在柔性钛和钽载体上电化学沉积铜层的特殊性,以及在铜/钛和铜/钽载体上依次电化学沉积锡层和在锡/铜/钛和锡/铜/钽载体上依次电化学沉积镍层的模式。研究发现了每种金属层的沉积电位与支撑物类型的关系。获得了一系列稳定的 Cu-Sn-Ni/Ti 和 Cu-Sn-Ni/Ta 前体薄膜。为了合成稳定的化合物 Cu2NiSnS4,优化了在活性硫气氛中退火(硫化)的阶段。根据 XRD 和拉曼光谱方法获得的数据,在 Ta 和 Ti 底座上合成具有多晶结构的稳定单相化合物 Cu2NiSnS4,需要在 550°С 的活性硫气氛中退火 60 分钟。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Specific Features of the Electrochemical Synthesis of Thin CNTS Films Supported by Titanium and Tantalum Foils

Specific Features of the Electrochemical Synthesis of Thin CNTS Films Supported by Titanium and Tantalum Foils

Abstract

The peculiarities of the electrochemical deposition of a copper layer on flexible titanium and tantalum supports as well as the modes of sequential electrochemical deposition of a tin layer on Cu/Ti and Cu/Ta supports and a nickel layer on the Sn/Cu/Ti and Sn/Cu/Ta supports are studied by cyclic voltammetry from the corresponding electrolyte solutions. The deposition potentials are found for each metal layer with regard to the support type. A wide series of stable precursor films Cu–Sn–Ni/Ti and Cu–Sn–Ni/Ta are obtained. The stage of annealing in the active sulfur atmosphere (sulfurization) is optimized aimed at the synthesis of stable compounds Cu2NiSnS4. Based on data obtained by the methods of XRD and Raman spectroscopy, it is shown that the synthesis of stable single-phase compounds Cu2NiSnS4 with the polycrystalline structure on the Ta and Ti supports requires that the annealing in the active sulfur atmosphere carried out at 550°С for 60 min.

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来源期刊
Russian Journal of Electrochemistry
Russian Journal of Electrochemistry 工程技术-电化学
CiteScore
1.90
自引率
8.30%
发文量
102
审稿时长
6 months
期刊介绍: Russian Journal of Electrochemistry is a journal that covers all aspects of research in modern electrochemistry. The journal welcomes submissions in English or Russian regardless of country and nationality of authors.
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