通过孔掺杂显著增强 Fe/MoSi2N4 中的垂直磁各向异性

IF 3.1 3区物理与天体物理 Q2 PHYSICS, APPLIED

Journal of Physics D: Applied Physics Pub Date : 2024-01-09 DOI:10.1088/1361-6463/ad1cbf

F. Guo, YM Xie, Xiaoqi Huang, Feng Li, Baosheng Liu, Xinwei Dong, Jin Zhou

{"title":"通过孔掺杂显著增强 Fe/MoSi2N4 中的垂直磁各向异性","authors":"F. Guo, YM Xie, Xiaoqi Huang, Feng Li, Baosheng Liu, Xinwei Dong, Jin Zhou","doi":"10.1088/1361-6463/ad1cbf","DOIUrl":null,"url":null,"abstract":"\n This study proposes a novel approach to enhanced the perpendicular magnetic anisotropy (PMA) of Fe adsorbed on a MoSi2N4 substrate through hole doping. First principles calculations are employed to investigate the PMA of freestanding Fe and Fe/MoSi2N4 complex system. It is found that the PMA of Fe atom slightly increases from freestanding Fe monolayer to the Fe/MoSi2N4 system, which is attributed to the overlap between Fe-3d and N-2p orbitals. More interestingly, it is found that the PMA of Fe atoms in Fe/MoSi2N4 can be further enhanced by hole doping, which enables the PMA to increase significantly, up to four times the original value. This finding provides a promising way to enhance the PMA in two-dimensional spintronic devices. These results offering potential applications in developing advanced Two-dimensional (2D) spintronic devices.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.1000,"publicationDate":"2024-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Significant Enhancement of Perpendicular Magnetic Anisotropy in Fe/MoSi2N4 by Hole Doping\",\"authors\":\"F. Guo, YM Xie, Xiaoqi Huang, Feng Li, Baosheng Liu, Xinwei Dong, Jin Zhou\",\"doi\":\"10.1088/1361-6463/ad1cbf\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n This study proposes a novel approach to enhanced the perpendicular magnetic anisotropy (PMA) of Fe adsorbed on a MoSi2N4 substrate through hole doping. First principles calculations are employed to investigate the PMA of freestanding Fe and Fe/MoSi2N4 complex system. It is found that the PMA of Fe atom slightly increases from freestanding Fe monolayer to the Fe/MoSi2N4 system, which is attributed to the overlap between Fe-3d and N-2p orbitals. More interestingly, it is found that the PMA of Fe atoms in Fe/MoSi2N4 can be further enhanced by hole doping, which enables the PMA to increase significantly, up to four times the original value. This finding provides a promising way to enhance the PMA in two-dimensional spintronic devices. These results offering potential applications in developing advanced Two-dimensional (2D) spintronic devices.\",\"PeriodicalId\":16789,\"journal\":{\"name\":\"Journal of Physics D: Applied Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":3.1000,\"publicationDate\":\"2024-01-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Physics D: Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1088/1361-6463/ad1cbf\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics D: Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1361-6463/ad1cbf","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

摘要

本研究提出了一种新方法，通过掺杂空穴来增强吸附在 MoSi2N4 衬底上的铁的垂直磁各向异性（PMA）。研究采用第一性原理计算来研究独立铁和铁/MoSi2N4 复合体系的垂直磁各向异性。结果发现，从独立的 Fe 单层到 Fe/MoSi2N4 体系，Fe 原子的 PMA 都略有增加，这归因于 Fe-3d 和 N-2p 轨道之间的重叠。更有趣的是，研究发现，Fe/MoSi2N4 中铁原子的 PMA 可通过空穴掺杂进一步增强，从而使 PMA 显著增加，最高可达原始值的四倍。这一发现为增强二维自旋电子器件中的 PMA 提供了一种可行的方法。这些结果为开发先进的二维（2D）自旋电子器件提供了潜在的应用前景。

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Significant Enhancement of Perpendicular Magnetic Anisotropy in Fe/MoSi2N4 by Hole Doping

This study proposes a novel approach to enhanced the perpendicular magnetic anisotropy (PMA) of Fe adsorbed on a MoSi2N4 substrate through hole doping. First principles calculations are employed to investigate the PMA of freestanding Fe and Fe/MoSi2N4 complex system. It is found that the PMA of Fe atom slightly increases from freestanding Fe monolayer to the Fe/MoSi2N4 system, which is attributed to the overlap between Fe-3d and N-2p orbitals. More interestingly, it is found that the PMA of Fe atoms in Fe/MoSi2N4 can be further enhanced by hole doping, which enables the PMA to increase significantly, up to four times the original value. This finding provides a promising way to enhance the PMA in two-dimensional spintronic devices. These results offering potential applications in developing advanced Two-dimensional (2D) spintronic devices.

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来源期刊

Journal of Physics D: Applied Physics 物理-物理：应用

CiteScore

6.80

自引率

8.80%

发文量

835

审稿时长

2.1 months

期刊介绍： This journal is concerned with all aspects of applied physics research, from biophysics, magnetism, plasmas and semiconductors to the structure and properties of matter.