系统研究硅纳米线的结构、电子和光学特性

A. Herrera-Carbajal, A. Sánchez-Castillo, José de Jesús Pelayo-Cárdenas, M. I. Reyes-Valderrama, Ventura Rodriguez-Lugo
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引用次数: 0

摘要

在这项研究中,我们利用密度泛函理论分析了一组不同方向的硅纳米线的结构、电子和光学特性。为了放松原子坐标和晶胞参数,我们进行了结构优化,然后得到了电子带结构和态密度。同时,我们利用偶极矩阵的元素计算了介电函数的虚部。此外,我们还将状态密度中的范霍夫奇异点与吸收光谱中的峰值之间的转变联系起来,从而确定了它们之间的关系,这可用于通过吸收光谱表征状态密度。结果表明,电子和光学特性取决于纳米线的直径和取向。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Systematic study of the structural, electronic and optical properties of silicon nanowires
In this work we analyzed the structural, electronic, and optical properties of a set of silicon nanowires oriented in different directions, using the density functional theory. Structural optimization was performed in order to relax the atomic coordinates and cell parameters, after which the electronic band structure and density of states were obtained. Simultaneously, we computed the imaginary part of the dielectric function using the elements of the dipolar matrix. Furthermore, we related the transitions between the Van Hove singularities in the density of states with peaks in the absorption spectra, thus identifying relationships among them, which could be used to characterize the density of states by means of the absorption spectrum. The results showed that the electronic and optical properties depend on the diameter and orientation of the nanowires.
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