通过将 SiH4 暴露于 Fe-ND 形成 β-FeSi2 NDs

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2023-12-25 DOI:10.35848/1347-4065/ad1898

Haruto Saito, K. Makihara, Noriyuki Taoka, Seiichi Miyazaki

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引用次数: 0

摘要

我们通过在 400oC 下将 Fe-NDs 暴露于 SiH4，在 SiO2 上形成了面积密度高达 ~1011 cm-2 的 β-FeSi2 纳米点 (NDs)，并对其室温发光特性进行了表征。即使在 1.0 Pa 的条件下，SiH4 暴露 60 秒后，也能在 0.7 至 0.85 eV 的能量区域观察到稳定的光致发光（PL）信号，这是 β-FeSi2 半导体相的特征。随着 SiH4 暴露量从 60 Pa-sec 增加到 600 Pa-sec，PL 强度增加了约 13 倍。值得注意的是，SiH4 暴露量进一步增加到 600 Pa-sec 以上时，PL 强度略有减弱。所观察到的聚光强度下降是由于在形成 β-FeSi2 相后，硅在 ND 上的选择性生长。

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Formation of β-FeSi2 NDs by SiH4-exposure to Fe-NDs

We have demonstrated formation of β-FeSi2 nanodots (NDs) with an areal density as high as ~1011 cm-2 on SiO2 by exposing Fe–NDs to SiH4 at 400oC and characterized their room–temperature light–emission properties. After the SiH4–exposure even at 1.0 Pa for 60 sec, stable photoluminescence (PL) signals, being characteristic of the semiconducting phase as β–FeSi2, were observed in the energy region from 0.7 to 0.85 eV. With an increase in the amount of SiH4 exposure from 60 to 600 Pa·sec, PL intensity increased by a factor of ~13. Note that, further increase in the amount of SiH4 over 600 Pa·sec, the PL intensity is weakened slightly. The observed decrease in the PL intensity is attributable to selective growth of Si onto the NDs after the formation of β–FeSi2 phase.

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS