{"title":"旋涂法制造的掺硼薄膜:掺杂浓度的影响","authors":"A. Atilgan, Kenan Özel","doi":"10.54287/gujsa.1362103","DOIUrl":null,"url":null,"abstract":"This work examined the impact of different levels of B-doping on the structural, morphological, optical, and electrical characteristics of ZnO thin films. Boron-doped zinc oxide thin films were deposited on glass substrates using the spin-coating technique. The B concentrations employed were 1, 2, 3, 4, and 5 at. %. The systematic characterizations manifest that the properties of the deposited films were heavily influenced by changing concentrations of B doping. It was found that as the concentration of B-doping increases, the values of grain size decrease. In addition, it was observed that ZnO thin films containing a lower concentration of B dopant exhibited higher transparency. Finally, it was figured out that the resistivity of the films declines dramatically with a higher content of B-doping. The results of our research may initiate further inquiries into the creation of superior thin films.","PeriodicalId":134301,"journal":{"name":"Gazi University Journal of Science Part A: Engineering and Innovation","volume":"265 1‐5","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Boron-doped thin films fabricated by the spin coating method: the effect of doping concentrations\",\"authors\":\"A. Atilgan, Kenan Özel\",\"doi\":\"10.54287/gujsa.1362103\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work examined the impact of different levels of B-doping on the structural, morphological, optical, and electrical characteristics of ZnO thin films. Boron-doped zinc oxide thin films were deposited on glass substrates using the spin-coating technique. The B concentrations employed were 1, 2, 3, 4, and 5 at. %. The systematic characterizations manifest that the properties of the deposited films were heavily influenced by changing concentrations of B doping. It was found that as the concentration of B-doping increases, the values of grain size decrease. In addition, it was observed that ZnO thin films containing a lower concentration of B dopant exhibited higher transparency. Finally, it was figured out that the resistivity of the films declines dramatically with a higher content of B-doping. The results of our research may initiate further inquiries into the creation of superior thin films.\",\"PeriodicalId\":134301,\"journal\":{\"name\":\"Gazi University Journal of Science Part A: Engineering and Innovation\",\"volume\":\"265 1‐5\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-12-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Gazi University Journal of Science Part A: Engineering and Innovation\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.54287/gujsa.1362103\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Gazi University Journal of Science Part A: Engineering and Innovation","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.54287/gujsa.1362103","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
这项研究探讨了不同程度的硼掺杂对氧化锌薄膜的结构、形态、光学和电学特性的影响。采用旋涂技术在玻璃基底上沉积了掺硼氧化锌薄膜。硼的浓度分别为 1、2、3、4 和 5%。系统特性分析表明,沉积薄膜的特性受掺硼浓度变化的影响很大。研究发现,随着掺杂硼浓度的增加,晶粒尺寸值也随之减小。此外,还观察到掺杂 B 的浓度越低,氧化锌薄膜的透明度越高。最后,我们还发现,随着掺杂 B 的浓度增加,薄膜的电阻率会急剧下降。我们的研究结果可能会引发人们对制造优质薄膜的进一步探索。
Boron-doped thin films fabricated by the spin coating method: the effect of doping concentrations
This work examined the impact of different levels of B-doping on the structural, morphological, optical, and electrical characteristics of ZnO thin films. Boron-doped zinc oxide thin films were deposited on glass substrates using the spin-coating technique. The B concentrations employed were 1, 2, 3, 4, and 5 at. %. The systematic characterizations manifest that the properties of the deposited films were heavily influenced by changing concentrations of B doping. It was found that as the concentration of B-doping increases, the values of grain size decrease. In addition, it was observed that ZnO thin films containing a lower concentration of B dopant exhibited higher transparency. Finally, it was figured out that the resistivity of the films declines dramatically with a higher content of B-doping. The results of our research may initiate further inquiries into the creation of superior thin films.