旋涂法制造的掺硼薄膜:掺杂浓度的影响

A. Atilgan, Kenan Özel
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引用次数: 0

摘要

这项研究探讨了不同程度的硼掺杂对氧化锌薄膜的结构、形态、光学和电学特性的影响。采用旋涂技术在玻璃基底上沉积了掺硼氧化锌薄膜。硼的浓度分别为 1、2、3、4 和 5%。系统特性分析表明,沉积薄膜的特性受掺硼浓度变化的影响很大。研究发现,随着掺杂硼浓度的增加,晶粒尺寸值也随之减小。此外,还观察到掺杂 B 的浓度越低,氧化锌薄膜的透明度越高。最后,我们还发现,随着掺杂 B 的浓度增加,薄膜的电阻率会急剧下降。我们的研究结果可能会引发人们对制造优质薄膜的进一步探索。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Boron-doped thin films fabricated by the spin coating method: the effect of doping concentrations
This work examined the impact of different levels of B-doping on the structural, morphological, optical, and electrical characteristics of ZnO thin films. Boron-doped zinc oxide thin films were deposited on glass substrates using the spin-coating technique. The B concentrations employed were 1, 2, 3, 4, and 5 at. %. The systematic characterizations manifest that the properties of the deposited films were heavily influenced by changing concentrations of B doping. It was found that as the concentration of B-doping increases, the values of grain size decrease. In addition, it was observed that ZnO thin films containing a lower concentration of B dopant exhibited higher transparency. Finally, it was figured out that the resistivity of the films declines dramatically with a higher content of B-doping. The results of our research may initiate further inquiries into the creation of superior thin films.
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