利用电流吸收电容器技术降低 SiC MOSFET 关断功率损耗的实验研究

IF 3 4区 工程技术 Q3 ENERGY & FUELS
Energies Pub Date : 2023-12-29 DOI:10.3390/en17010189
M. Harasimczuk, Rafał Kopacz, Przemysław Trochimiuk, R. Miśkiewicz, J. Rąbkowski
{"title":"利用电流吸收电容器技术降低 SiC MOSFET 关断功率损耗的实验研究","authors":"M. Harasimczuk, Rafał Kopacz, Przemysław Trochimiuk, R. Miśkiewicz, J. Rąbkowski","doi":"10.3390/en17010189","DOIUrl":null,"url":null,"abstract":"This paper investigates the current sink capacitor technique as a method to minimize the turn-off power losses of SiC MOSFETs operated with zero-voltage switching (ZVS). The method is simple and is based on adding auxiliary capacitors in parallel to the transistors, allowing the sink capacitor to take over part of the channel current, thus limiting the power loss while also advantageously lowering the dvds/dt ratio. The technique is validated and experimentally studied based on a single-pulse test setup with 1200 V-rated SiC MOSFETs, with several capacitances and gate resistance values, at various switched currents up to roughly 60 A. It is shown that by employing even very small capacitances, in the range of nanofarads, the turn-off power loss can be reduced by over tenfold, with a negligible impact on the volume and complexity of the system. Thus, the presented method can be effectively employed to improve soft-switched power converters.","PeriodicalId":11557,"journal":{"name":"Energies","volume":"48 S228","pages":""},"PeriodicalIF":3.0000,"publicationDate":"2023-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Experimental Investigation on SiC MOSFET Turn-Off Power Loss Reduction Using the Current Sink Capacitor Technique\",\"authors\":\"M. Harasimczuk, Rafał Kopacz, Przemysław Trochimiuk, R. Miśkiewicz, J. Rąbkowski\",\"doi\":\"10.3390/en17010189\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper investigates the current sink capacitor technique as a method to minimize the turn-off power losses of SiC MOSFETs operated with zero-voltage switching (ZVS). The method is simple and is based on adding auxiliary capacitors in parallel to the transistors, allowing the sink capacitor to take over part of the channel current, thus limiting the power loss while also advantageously lowering the dvds/dt ratio. The technique is validated and experimentally studied based on a single-pulse test setup with 1200 V-rated SiC MOSFETs, with several capacitances and gate resistance values, at various switched currents up to roughly 60 A. It is shown that by employing even very small capacitances, in the range of nanofarads, the turn-off power loss can be reduced by over tenfold, with a negligible impact on the volume and complexity of the system. Thus, the presented method can be effectively employed to improve soft-switched power converters.\",\"PeriodicalId\":11557,\"journal\":{\"name\":\"Energies\",\"volume\":\"48 S228\",\"pages\":\"\"},\"PeriodicalIF\":3.0000,\"publicationDate\":\"2023-12-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Energies\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.3390/en17010189\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENERGY & FUELS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Energies","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.3390/en17010189","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
引用次数: 0

摘要

本文研究了电流吸收电容器技术,将其作为一种方法,用于最大限度地降低采用零电压开关 (ZVS) 运行的 SiC MOSFET 的关断功率损耗。该方法非常简单,其基础是在晶体管上并联辅助电容器,让汇流电容器接管部分沟道电流,从而限制功率损耗,同时降低 dvds/dt 比。实验表明,即使采用纳法拉级的极小电容,关断功率损耗也能降低 10 倍以上,而对系统体积和复杂性的影响微乎其微。因此,所提出的方法可有效用于改进软开关功率转换器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental Investigation on SiC MOSFET Turn-Off Power Loss Reduction Using the Current Sink Capacitor Technique
This paper investigates the current sink capacitor technique as a method to minimize the turn-off power losses of SiC MOSFETs operated with zero-voltage switching (ZVS). The method is simple and is based on adding auxiliary capacitors in parallel to the transistors, allowing the sink capacitor to take over part of the channel current, thus limiting the power loss while also advantageously lowering the dvds/dt ratio. The technique is validated and experimentally studied based on a single-pulse test setup with 1200 V-rated SiC MOSFETs, with several capacitances and gate resistance values, at various switched currents up to roughly 60 A. It is shown that by employing even very small capacitances, in the range of nanofarads, the turn-off power loss can be reduced by over tenfold, with a negligible impact on the volume and complexity of the system. Thus, the presented method can be effectively employed to improve soft-switched power converters.
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来源期刊
Energies
Energies ENERGY & FUELS-
CiteScore
6.20
自引率
21.90%
发文量
8045
审稿时长
1.9 months
期刊介绍: Energies (ISSN 1996-1073) is an open access journal of related scientific research, technology development and policy and management studies. It publishes reviews, regular research papers, and communications. Our aim is to encourage scientists to publish their experimental and theoretical results in as much detail as possible. There is no restriction on the length of the papers. The full experimental details must be provided so that the results can be reproduced.
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