用于无滤光片本征窄带日光盲紫外线探测器的氧化硼锡，具有 231 至 275 纳米的可调光响应峰值

IF 5.4 1区物理与天体物理 Q1 OPTICS

APL Photonics Pub Date : 2024-01-03 DOI:10.1063/5.0174556

Cunhua Xu, Chaofan Zhang, Lemin Jia, Zhao Wang, Junfang He, Wei Zheng

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引用次数: 0

摘要

日光盲紫外线（SBUV）探测在广泛的应用领域中具有广阔的前景，而合成具有合适带隙的半导体材料则是其中一个重要的研究重点。在这项研究中，通过磁控溅射法生长了对 SBUV 具有良好选择性的 BSnO 薄膜，并将其带隙调整为 4.1 至 5.3 eV。在 BSnO 薄膜的基础上，首先制造出了无滤波器窄带 SBUV 探测器，其探测范围窄，响应率超高（113 A/W），满足了探测极弱 SBUV 信号的要求。此外，还制作出了石墨烯/BSnO/SiC 异质结光伏探测器，在 0 V 偏压下具有高光暗电流比和超快响应，证实了它们能够处理瞬态信号的检测。

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Boron tin oxide for filterless intrinsic-narrowband solar-blind ultraviolet detectors with tunable photoresponse peak from 231 to 275 nm

Solar-blind ultraviolet (SBUV) detection has a great prospect in a wide range of applications, in which the synthesis of semiconductor materials with a suitable bandgap can be an important research focus. In this work, BSnO films with good selectivity for SBUV were grown by magnetron sputtering with the bandgap adjusted from 4.1 to 5.3 eV. Based on the BSnO films, filter-less narrowband SBUV detectors were fabricated first, exhibiting a narrow detection range and an ultra-high responsivity (113 A/W) required by the detection of extremely weak SBUV signals. In addition, graphene/BSnO/SiC heterojunction photovoltaic detectors were also fabricated, with a high photo-to-dark current ratio and an ultra-fast response exhibited under 0 V bias, confirming their ability to handle the detection of transient signals.

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来源期刊

APL Photonics Physics and Astronomy-Atomic and Molecular Physics, and Optics

CiteScore

10.30

自引率

3.60%

发文量

107

审稿时长

19 weeks

期刊介绍： APL Photonics is the new dedicated home for open access multidisciplinary research from and for the photonics community. The journal publishes fundamental and applied results that significantly advance the knowledge in photonics across physics, chemistry, biology and materials science.