应变对氮化镓中载流子传输影响的全波段蒙特卡洛分析

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2024-01-04 DOI:10.35848/1347-4065/ad1005

Wataru Miyazaki, Hajime Tanaka, Nobuya Mori

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引用次数: 0

摘要

本文采用全带蒙特卡洛法结合经验紧约束法研究了应变对氮化镓（GaN）中载流子传输的影响。讨论了对载流子迁移率、载流子漂移速度和击穿特性的影响。压缩单轴或拉伸双轴应变有利于在垂直氮化镓器件中实现更高的空穴迁移率，这是因为轻空穴带被提升到重空穴带之上。对击穿现象的分析表明，应变对带状结构的影响不会降低击穿特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Full-band Monte Carlo analysis of strain effects on carrier transport in GaN

The effects of strain on the carrier transport in gallium nitride (GaN) are investigated using a full-band Monte Carlo method combined with an empirical tight-binding method. The impacts on the carrier mobility, carrier drift velocity, and breakdown characteristics are discussed. Compressive uniaxial or tensile biaxial strain is beneficial for achieving higher hole mobility in vertical GaN devices due to the light-hole band being lifted above the heavy-hole band. Analysis of the breakdown phenomena indicates that strain does not degrade the breakdown characteristics in terms of its effect on the band structure.

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS