软 X 射线辐照和原子氢退火对氧化石墨烯还原的光子能量依赖性

IF 1.5 4区 物理与天体物理 Q3 PHYSICS, APPLIED
Akira Heya, Akinori Fujibuchi, Masahiro Hirata, Yoshiaki Matsuo, Junichi Inamoto, Kazuhiro Kanda, Koji Sumitomo
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引用次数: 0

摘要

研究了软 X 射线辐照和原子氢退火对氧化石墨烯(GO)还原获得石墨烯的影响。为了明确软 X 射线与 GO 之间的相互作用,在 NewSUBARU 同步辐射设施中分别使用 300 eV 和 550 eV 的软 X 射线进行 C 1s 和 O 1s 内壳电子激发。通过使用软 X 射线,在低于 150 ℃(300 eV)和 60 ℃(550 eV)的温度下实现了 GO 薄膜的低温还原。X 射线光电子能谱中与 O 有关的峰,如 C-O-C 峰,在 550 eV 下比 300 eV 下的峰更小。这一结果表明,激发 O 的核壳电子会增强 GO 的还原性。软 X 射线在 300 和 550 eV 分别优先打断 C-C 和 C-O 键。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Photon energy dependence of graphene oxide reduction by soft X-ray irradiation and atomic hydrogen annealing
The effects of soft X-ray irradiation and atomic hydrogen annealing on the reduction of graphene oxide (GO) to obtain graphene were investigated. To clarify the interaction between soft X-rays and GO, soft X-rays of 300 eV and 550 eV were used for C 1s and O 1s inner-shell electron excitation, respectively at the NewSUBARU synchrotron radiation facility. Low-temperature reduction of the GO film was achieved by using soft X-ray at temperatures below 150 °C at 300 eV, and 60 °C at 550 eV. O-related peaks in X-ray photoelectron spectroscopy, such as the C–O–C peak, were smaller at 550 eV than those at 300 eV. This result indicates that excitation of the core–shell electrons of O enhances the reduction of GO. Soft X-rays preferentially break C–C and C–O bonds at 300 and 550 eV, respectively.
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来源期刊
Japanese Journal of Applied Physics
Japanese Journal of Applied Physics 物理-物理:应用
CiteScore
3.00
自引率
26.70%
发文量
818
审稿时长
3.5 months
期刊介绍: The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS
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