电子束辐照在 n 型和 p 型同外延氮化镓层中产生的氮置换相关重组中心

IF 2.3 4区物理与天体物理 Q3 PHYSICS, APPLIED

Applied Physics Express Pub Date : 2024-01-03 DOI:10.35848/1882-0786/ad16ad

Meguru Endo, Masahiro Horita and Jun Suda

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引用次数: 0

摘要

通过分析同外延氮化镓 p-n 结中的肖克利-雷德-霍尔（SRH）重组电流，研究了 n 型和 p 型氮化镓中由 N 原子位移产生的点缺陷所形成的重组中心。这些缺陷是在 137 keV 的电子束（EB）辐照下有意产生的。辐照后，p+-n 结二极管中的净掺杂浓度没有变化，但随着 EB 通量的增加，p-n+ 结二极管中的掺杂浓度有所下降。SRH 重组电流也随着通量的增加而增加。这项工作还评估了重组寿命与通过深层瞬态光谱获得的陷阱浓度之间的关系。

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Nitrogen-displacement-related recombination centers generated by electron beam irradiation in n-type and p-type homoepitaxial GaN layers

Recombination centers originating from point defects generated by the displacement of N atoms in n-type and p-type GaN were investigated by analyzing Shockley–Read–Hall (SRH) recombination currents in homoepitaxial GaN p–n junctions. These defects were intentionally generated by electron beam (EB) irradiation at 137 keV. The net doping concentrations in p+–n junction diodes were not changed following irradiation although the levels in p–n+ junction diodes decreased as the EB fluence was increased. The SRH recombination current also increased with increases in the fluence. This work additionally evaluated the relationship between recombination lifetimes and trap concentrations obtained by deep level transient spectroscopy.

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来源期刊

Applied Physics Express 物理-物理：应用

CiteScore

4.80

自引率

8.70%

发文量

310

审稿时长

1.2 months

期刊介绍： Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).