高度有序的喷墨打印量子点薄膜实现了高效稳定的 QLED,EQE 超过 23

IF 42.9 Q1 ELECTROCHEMISTRY
Changting Wei , Bo Xu , Meng Zhang , Zhenhuang Su , Jiawei Gu , Wenrui Guo , Xingyu Gao , Wenming Su , Zheng Cui , Seokwoo Jeon , Zhiyong Fan , Haibo Zeng
{"title":"高度有序的喷墨打印量子点薄膜实现了高效稳定的 QLED,EQE 超过 23","authors":"Changting Wei ,&nbsp;Bo Xu ,&nbsp;Meng Zhang ,&nbsp;Zhenhuang Su ,&nbsp;Jiawei Gu ,&nbsp;Wenrui Guo ,&nbsp;Xingyu Gao ,&nbsp;Wenming Su ,&nbsp;Zheng Cui ,&nbsp;Seokwoo Jeon ,&nbsp;Zhiyong Fan ,&nbsp;Haibo Zeng","doi":"10.1016/j.esci.2023.100227","DOIUrl":null,"url":null,"abstract":"<div><p>Inkjet-printed quantum dot light-emitting diodes (QLEDs) are emerging as a promising technology for next-generation displays. However, the progress in fabricating QLEDs using inkjet printing technique has been slower compared to spin-coated devices, particularly in terms of efficiency and stability. The key to achieving high performance QLEDs lies in creating a highly ordered and uniform inkjet-printed quantum dot (QD) thin film. In this study, we present a highly effective strategy to significantly improve the quality of inkjet-printed CdZnSe/CdZnS/ZnS QD thin films through a pressure-assisted thermal annealing (PTA) approach. Benefiting from this PTA process, a high quality QD thin film with ordered packing, low surface roughness, high photoluminescence and excellent electrical property is obtained. The mechanism behind the PTA process and its profound impact on device performance have been thoroughly investigated and understood. Consequently, a record high external quantum efficiency (EQE) of 23.08% with an impressive operational lifetime (<em>T</em><sub>50</sub>) of up to 343,342 ​h@100 ​cd ​m<sup>−2</sup>, and a record EQE of 22.43% with <em>T</em><sub>50</sub> exceeding to 1,500,463 ​h@100 ​cd ​m<sup>−2</sup> are achieved in inkjet-printed red and green CdZnSe-based QLEDs, respectively. This work highlights the PTA process as an important approach to realize highly efficient and stable inkjet-printed QLEDs, thus advancing QLED technology to practical applications.</p></div>","PeriodicalId":100489,"journal":{"name":"eScience","volume":null,"pages":null},"PeriodicalIF":42.9000,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2667141723001817/pdfft?md5=8b2610af39fa4fe085c24a1656ce25b4&pid=1-s2.0-S2667141723001817-main.pdf","citationCount":"0","resultStr":"{\"title\":\"Highly ordered inkjet-printed quantum-dot thin films enable efficient and stable QLEDs with EQE exceeding 23%\",\"authors\":\"Changting Wei ,&nbsp;Bo Xu ,&nbsp;Meng Zhang ,&nbsp;Zhenhuang Su ,&nbsp;Jiawei Gu ,&nbsp;Wenrui Guo ,&nbsp;Xingyu Gao ,&nbsp;Wenming Su ,&nbsp;Zheng Cui ,&nbsp;Seokwoo Jeon ,&nbsp;Zhiyong Fan ,&nbsp;Haibo Zeng\",\"doi\":\"10.1016/j.esci.2023.100227\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Inkjet-printed quantum dot light-emitting diodes (QLEDs) are emerging as a promising technology for next-generation displays. However, the progress in fabricating QLEDs using inkjet printing technique has been slower compared to spin-coated devices, particularly in terms of efficiency and stability. The key to achieving high performance QLEDs lies in creating a highly ordered and uniform inkjet-printed quantum dot (QD) thin film. In this study, we present a highly effective strategy to significantly improve the quality of inkjet-printed CdZnSe/CdZnS/ZnS QD thin films through a pressure-assisted thermal annealing (PTA) approach. Benefiting from this PTA process, a high quality QD thin film with ordered packing, low surface roughness, high photoluminescence and excellent electrical property is obtained. The mechanism behind the PTA process and its profound impact on device performance have been thoroughly investigated and understood. Consequently, a record high external quantum efficiency (EQE) of 23.08% with an impressive operational lifetime (<em>T</em><sub>50</sub>) of up to 343,342 ​h@100 ​cd ​m<sup>−2</sup>, and a record EQE of 22.43% with <em>T</em><sub>50</sub> exceeding to 1,500,463 ​h@100 ​cd ​m<sup>−2</sup> are achieved in inkjet-printed red and green CdZnSe-based QLEDs, respectively. This work highlights the PTA process as an important approach to realize highly efficient and stable inkjet-printed QLEDs, thus advancing QLED technology to practical applications.</p></div>\",\"PeriodicalId\":100489,\"journal\":{\"name\":\"eScience\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":42.9000,\"publicationDate\":\"2024-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.sciencedirect.com/science/article/pii/S2667141723001817/pdfft?md5=8b2610af39fa4fe085c24a1656ce25b4&pid=1-s2.0-S2667141723001817-main.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"eScience\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2667141723001817\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ELECTROCHEMISTRY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"eScience","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2667141723001817","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ELECTROCHEMISTRY","Score":null,"Total":0}
引用次数: 0

摘要

喷墨打印量子点发光二极管(QLED)正在成为下一代显示器的一项前景广阔的技术。然而,与旋涂器件相比,使用喷墨打印技术制造 QLED 的进展较慢,尤其是在效率和稳定性方面。实现高性能 QLED 的关键在于制造出高度有序和均匀的喷墨打印量子点 (QD) 薄膜。在本研究中,我们提出了一种高效策略,通过压力辅助热退火(PTA)方法显著提高喷墨打印 CdZnSe/CdZnS/ZnS QD 薄膜的质量。得益于这种 PTA 工艺,获得了具有有序堆积、低表面粗糙度、高光致发光和优异电性能的高质量 QD 薄膜。我们对 PTA 工艺背后的机理及其对器件性能的深远影响进行了深入研究和了解。结果,在喷墨打印的红色和绿色 CdZnSe 基 QLED 中,外部量子效率(EQE)分别达到了创纪录的 23.08%,工作寿命(T50)长达 343,342 h@100 cd-m-2;外部量子效率(EQE)分别达到了创纪录的 22.43%,T50 超过 1,500,463 h@100 cd-m-2。这项工作凸显了 PTA 工艺是实现高效、稳定的喷墨打印 QLED 的重要方法,从而推动了 QLED 技术的实际应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Highly ordered inkjet-printed quantum-dot thin films enable efficient and stable QLEDs with EQE exceeding 23%

Highly ordered inkjet-printed quantum-dot thin films enable efficient and stable QLEDs with EQE exceeding 23%

Highly ordered inkjet-printed quantum-dot thin films enable efficient and stable QLEDs with EQE exceeding 23%

Inkjet-printed quantum dot light-emitting diodes (QLEDs) are emerging as a promising technology for next-generation displays. However, the progress in fabricating QLEDs using inkjet printing technique has been slower compared to spin-coated devices, particularly in terms of efficiency and stability. The key to achieving high performance QLEDs lies in creating a highly ordered and uniform inkjet-printed quantum dot (QD) thin film. In this study, we present a highly effective strategy to significantly improve the quality of inkjet-printed CdZnSe/CdZnS/ZnS QD thin films through a pressure-assisted thermal annealing (PTA) approach. Benefiting from this PTA process, a high quality QD thin film with ordered packing, low surface roughness, high photoluminescence and excellent electrical property is obtained. The mechanism behind the PTA process and its profound impact on device performance have been thoroughly investigated and understood. Consequently, a record high external quantum efficiency (EQE) of 23.08% with an impressive operational lifetime (T50) of up to 343,342 ​h@100 ​cd ​m−2, and a record EQE of 22.43% with T50 exceeding to 1,500,463 ​h@100 ​cd ​m−2 are achieved in inkjet-printed red and green CdZnSe-based QLEDs, respectively. This work highlights the PTA process as an important approach to realize highly efficient and stable inkjet-printed QLEDs, thus advancing QLED technology to practical applications.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
33.70
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信