{"title":"用于光器件应用的有机-无机 PTAA-SiGe 透明光学材料性能分析","authors":"Syafiqa Nasir, Ghosh Bablu Kumar, Pratap Kumar Dakua, Fuei Pien Chee, K.A. Mohamad, Ismail Saad","doi":"10.1016/j.optmat.2023.114768","DOIUrl":null,"url":null,"abstract":"<p><span>The SiGe<span> materials has currently received a lot of interest due to its application for the advancement of optoelectronics<span><span><span> and related sensor technologies. Its promising stability, and band gap-dependent performance for both bulk and nano-crystalline properties are vital as optical materials. To investigate the electrical performance of SiGe active materials based photo device, the spin coated organic p-materials contact is developed on sputtered SiGe on Quartz and ITO glass substrates. Both Si0.8Ge0.2 and Si0.9Ge0.1 films greater than 85 % visible band transparency are predicted that the deposited SiGe is nano-crystalline nature. It is also revealed from absorption-based band gap, AFM </span>grain size and </span>XRD<span> analysis. The transmittance<span> of SiGe thin film<span> is increased with the microstrain of the films as a result, better opto-electrical performance is displayed. Ge composition though slightly makes variation of lattice constant and strain effect however, relatively lower transmittance films greater current density is exhibited. A higher rectifying ratio for lower transparent SiGe material deposited on ITO glass substrate is shown in the dark. Transparency and optoelectrical performance viewpoint white light illuminated PTAA/Si</span></span></span></span></span></span><sub>0.8</sub>Ge<sub>0.2</sub> is shown better on Quartz substrate whereas the dark analysis PTAA/Si<sub>0.9</sub>Ge<sub>0.1</sub> is realized more favorable on ITO glass substrate.</p>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"81 1","pages":""},"PeriodicalIF":3.8000,"publicationDate":"2023-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Organic-inorganic PTAA-SiGe transparent optical materials performance analysis for photo device applications\",\"authors\":\"Syafiqa Nasir, Ghosh Bablu Kumar, Pratap Kumar Dakua, Fuei Pien Chee, K.A. Mohamad, Ismail Saad\",\"doi\":\"10.1016/j.optmat.2023.114768\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><span>The SiGe<span> materials has currently received a lot of interest due to its application for the advancement of optoelectronics<span><span><span> and related sensor technologies. Its promising stability, and band gap-dependent performance for both bulk and nano-crystalline properties are vital as optical materials. To investigate the electrical performance of SiGe active materials based photo device, the spin coated organic p-materials contact is developed on sputtered SiGe on Quartz and ITO glass substrates. Both Si0.8Ge0.2 and Si0.9Ge0.1 films greater than 85 % visible band transparency are predicted that the deposited SiGe is nano-crystalline nature. It is also revealed from absorption-based band gap, AFM </span>grain size and </span>XRD<span> analysis. The transmittance<span> of SiGe thin film<span> is increased with the microstrain of the films as a result, better opto-electrical performance is displayed. Ge composition though slightly makes variation of lattice constant and strain effect however, relatively lower transmittance films greater current density is exhibited. A higher rectifying ratio for lower transparent SiGe material deposited on ITO glass substrate is shown in the dark. Transparency and optoelectrical performance viewpoint white light illuminated PTAA/Si</span></span></span></span></span></span><sub>0.8</sub>Ge<sub>0.2</sub> is shown better on Quartz substrate whereas the dark analysis PTAA/Si<sub>0.9</sub>Ge<sub>0.1</sub> is realized more favorable on ITO glass substrate.</p>\",\"PeriodicalId\":19564,\"journal\":{\"name\":\"Optical Materials\",\"volume\":\"81 1\",\"pages\":\"\"},\"PeriodicalIF\":3.8000,\"publicationDate\":\"2023-12-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1016/j.optmat.2023.114768\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1016/j.optmat.2023.114768","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
锗硅材料因其在光电子学和相关传感器技术领域的应用而备受关注。作为一种光学材料，它具有良好的稳定性，而且其性能与带隙有关，无论是块状还是纳米晶体性质都至关重要。为了研究基于 SiGe 有源材料的光电器件的电气性能，在石英和 ITO 玻璃衬底上的溅射 SiGe 上开发了自旋涂层有机 p 材料触点。根据预测，Si0.8Ge0.2 和 Si0.9Ge0.1 薄膜的可见带透明度均大于 85%，表明沉积的 SiGe 具有纳米结晶的性质。基于吸收的带隙、原子力显微镜晶粒尺寸和 XRD 分析也揭示了这一点。随着薄膜微应变的增加，锗硅薄膜的透射率也随之增加，从而显示出更好的光电性能。虽然 Ge 成分会使晶格常数和应变效应略有变化，但相对而言，透射率较低的薄膜会显示出更大的电流密度。在暗处，沉积在 ITO 玻璃基板上的低透明度硅-锗材料显示出更高的整流比。在石英衬底上，白光照射下的 PTAA/Si0.8Ge0.2 显示出更好的透明度和光电性能，而在 ITO 玻璃衬底上，暗光分析下的 PTAA/Si0.9Ge0.1 则显示出更好的透明度和光电性能。
The SiGe materials has currently received a lot of interest due to its application for the advancement of optoelectronics and related sensor technologies. Its promising stability, and band gap-dependent performance for both bulk and nano-crystalline properties are vital as optical materials. To investigate the electrical performance of SiGe active materials based photo device, the spin coated organic p-materials contact is developed on sputtered SiGe on Quartz and ITO glass substrates. Both Si0.8Ge0.2 and Si0.9Ge0.1 films greater than 85 % visible band transparency are predicted that the deposited SiGe is nano-crystalline nature. It is also revealed from absorption-based band gap, AFM grain size and XRD analysis. The transmittance of SiGe thin film is increased with the microstrain of the films as a result, better opto-electrical performance is displayed. Ge composition though slightly makes variation of lattice constant and strain effect however, relatively lower transmittance films greater current density is exhibited. A higher rectifying ratio for lower transparent SiGe material deposited on ITO glass substrate is shown in the dark. Transparency and optoelectrical performance viewpoint white light illuminated PTAA/Si0.8Ge0.2 is shown better on Quartz substrate whereas the dark analysis PTAA/Si0.9Ge0.1 is realized more favorable on ITO glass substrate.
期刊介绍：
Optical Materials has an open access mirror journal Optical Materials: X, sharing the same aims and scope, editorial team, submission system and rigorous peer review.
The purpose of Optical Materials is to provide a means of communication and technology transfer between researchers who are interested in materials for potential device applications. The journal publishes original papers and review articles on the design, synthesis, characterisation and applications of optical materials.
OPTICAL MATERIALS focuses on:
• Optical Properties of Material Systems;
• The Materials Aspects of Optical Phenomena;
• The Materials Aspects of Devices and Applications.
Authors can submit separate research elements describing their data to Data in Brief and methods to Methods X.
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