在极紫外光刻技术中，底层对基底产生的二次电子的屏蔽效应

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED

Japanese Journal of Applied Physics Pub Date : 2023-12-27 DOI:10.35848/1347-4065/ad10ee

Takahiro Kozawa

{"title":"在极紫外光刻技术中，底层对基底产生的二次电子的屏蔽效应","authors":"Takahiro Kozawa","doi":"10.35848/1347-4065/ad10ee","DOIUrl":null,"url":null,"abstract":"The wavelength of a radiation exposure source has been reduced to improve the resolution of lithography in the semiconductor industry. The energy of photons reached the ionizing radiation region when using EUV radiation. Because the energy of EUV photons for lithography is 92.5 eV, the EUV photons can ionize all kinds of atom. In this study, the shielding effect of the underlayer against the secondary electrons generated in the substrates was investigated using the bridging risk as an indicator. Secondary electron dynamics was calculated by a Monte Carlo method assuming the resist-underlayer-substrate system. The physical properties of the underlayer were assumed to be the same as those of the resist layer. The secondary electrons generated in the substrate significantly affected the bridging risk when the underlayer thickness was smaller than approximately 5 nm. The resist process should be designed by considering the secondary electrons generated in the substrate.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"88 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2023-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Shielding effect of underlayer against secondary electrons generated in substrate in extreme ultraviolet lithography\",\"authors\":\"Takahiro Kozawa\",\"doi\":\"10.35848/1347-4065/ad10ee\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The wavelength of a radiation exposure source has been reduced to improve the resolution of lithography in the semiconductor industry. The energy of photons reached the ionizing radiation region when using EUV radiation. Because the energy of EUV photons for lithography is 92.5 eV, the EUV photons can ionize all kinds of atom. In this study, the shielding effect of the underlayer against the secondary electrons generated in the substrates was investigated using the bridging risk as an indicator. Secondary electron dynamics was calculated by a Monte Carlo method assuming the resist-underlayer-substrate system. The physical properties of the underlayer were assumed to be the same as those of the resist layer. The secondary electrons generated in the substrate significantly affected the bridging risk when the underlayer thickness was smaller than approximately 5 nm. The resist process should be designed by considering the secondary electrons generated in the substrate.\",\"PeriodicalId\":14741,\"journal\":{\"name\":\"Japanese Journal of Applied Physics\",\"volume\":\"88 1\",\"pages\":\"\"},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2023-12-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Japanese Journal of Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.35848/1347-4065/ad10ee\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad10ee","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

摘要

为了提高半导体行业光刻技术的分辨率，辐射照射源的波长被缩短了。使用 EUV 辐射时，光子的能量达到电离辐射区域。由于用于光刻的 EUV 光子的能量为 92.5 eV，因此 EUV 光子可以电离各种原子。本研究以桥接风险为指标，研究了底层对基底中产生的二次电子的屏蔽效果。假设电阻-底层-基底系统，用蒙特卡罗方法计算了二次电子动力学。假设底层的物理特性与抗蚀层相同。当底层厚度小于约 5 nm 时，基底中产生的次级电子会显著影响桥接风险。在设计抗蚀层工艺时应考虑基底中产生的二次电子。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Shielding effect of underlayer against secondary electrons generated in substrate in extreme ultraviolet lithography

The wavelength of a radiation exposure source has been reduced to improve the resolution of lithography in the semiconductor industry. The energy of photons reached the ionizing radiation region when using EUV radiation. Because the energy of EUV photons for lithography is 92.5 eV, the EUV photons can ionize all kinds of atom. In this study, the shielding effect of the underlayer against the secondary electrons generated in the substrates was investigated using the bridging risk as an indicator. Secondary electron dynamics was calculated by a Monte Carlo method assuming the resist-underlayer-substrate system. The physical properties of the underlayer were assumed to be the same as those of the resist layer. The secondary electrons generated in the substrate significantly affected the bridging risk when the underlayer thickness was smaller than approximately 5 nm. The resist process should be designed by considering the secondary electrons generated in the substrate.

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS