稀土离子掺杂对硼酸镉锂玻璃电导率和介电性质的影响

IF 0.8 4区 材料科学 Q4 MATERIALS SCIENCE, CERAMICS
J. Anjaiah
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引用次数: 0

摘要

摘要 本研究采用 102-105 Hz 的频率范围和 30 至 250°C 的温度范围,对 30 Li2O-10CdO-(60-x)-B2O3:xLn2O3(其中 x = 0 和 1,Ln = Pr、Nd、Sm 和 Eu)的介电常数(ε')、损耗因子(tanδ)和交流电导率(σac)进行了研究。采用差示扫描量热法(DSC)确认了所研究材料的玻璃性质。当稀土离子以任何频率或温度加入玻璃基体时,介电参数ε'、tan δ和σac都会上升。掺杂玻璃的介电击穿能和活化能低于未掺杂玻璃,而交流电则在室温下流过它们。稀土离子掺杂的介电参数值随着原子序数(Z)的增加而随温度降低。掺杂 Pr3+ 的玻璃基体的介电参数值最高。QM 隧道模型用于描述这些玻璃的交流传导行为。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Effect of Rare Earth Ion Doping on ac Conductivity and Dielectric Properties of Lithium Cadmium Borate Glasses

Effect of Rare Earth Ion Doping on ac Conductivity and Dielectric Properties of Lithium Cadmium Borate Glasses

Abstract

The dielectric constant (ε'), loss factor (tanδ), and ac conductivity (σac) of 30 Li2O–10CdO–(60 – x)-B2O3:xLn2O3, where (x = 0 and 1) and (Ln = Pr, Nd, Sm, and Eu) were investigated using a frequency range of 102–105 Hz and temperature ranging from 30 to 250°C in this work. The differential scanning calorimetry (DSC) technique was employed to confirm the glassy nature of the materials under study. The dielectric parameters ε', tan δ, and σac rise when rare-earth ions are added to the glass matrix at any frequency or temperature. Dielectric breakdown and activation energies are lower in doped than in undoped glasses while ac current flows through them at room temperature. Rare-earth ion doping’s dielectric parameter values decrease with temperature as atomic number (Z) rises. The dielectric parameter values for the Pr3+ doped glass matrix is the highest. QM tunnelling model was used to describe the ac conduction behaviour of these glasses.

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来源期刊
Glass Physics and Chemistry
Glass Physics and Chemistry 工程技术-材料科学:硅酸盐
CiteScore
1.20
自引率
14.30%
发文量
46
审稿时长
6-12 weeks
期刊介绍: Glass Physics and Chemistry presents results of research on the inorganic and physical chemistry of glass, ceramics, nanoparticles, nanocomposites, and high-temperature oxides and coatings. The journal welcomes manuscripts from all countries in the English or Russian language.
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