Heterogeneous interface engineering enabling homogeneous metal halide perovskite nanowires for artificial synapses

Metal halide perovskites (MHPs)-constructed devices for artificial synapses have attractive and robust prospects in neuromorphic computing. However, the challenge is that their power-consumption does not compete with the biological synapses with a magnitude of fJ per spike. This is since hierarchical 0D/1D nanostructures generated from the phase separation in the liquid-phase reaction of MHPs intrinsically increase the power consumption, while homogeneous 1D MHPs may effectively break such bottleneck. Here, we propose the heterogeneous interface engineering to prepare homogeneous 1D MHPs CsPbI₃ nanowires (NWs) with a very high morphological yield (almost 100 %) and diameter of 17.2 nm. We demonstrate the homogeneous NWs-mediated devices exhibit a low operating voltage (−0.7 V), over one order of magnitude lower than conventional flash memories. Our device also triggers the classic potentiation and depression processes exhibiting excellent electronic synaptic plasticity. This work could be conducive to synthesizing homogeneous 1D MHPs nanostructure in artificial synapses and inspire more research on various nanostructures for neuromorphic system application.