Ahmet Bi̇lgi̇li̇, Ömer Akpinar, Naki Kaya, M. Öztürk
{"title":"将 QMSA 方法应用于 Al 0.3 Ga 0.7 N/GaN HEMT 结构","authors":"Ahmet Bi̇lgi̇li̇, Ömer Akpinar, Naki Kaya, M. Öztürk","doi":"10.31466/kfbd.1276114","DOIUrl":null,"url":null,"abstract":"In this study, Al 0.3 Ga 0.7 N/GaN high electron mobility transistor (HEMT) structure is grown on a sapphire (Al2O3) substrate by using metal-organic vapor phase epitaxy (MOVPE), and its electron transport and magnetic transport properties are investigated. Resistivity is measured in the 20-350 K temperature range. Hall mobility and Hall carrier concentration are measured in the 0-1.5 T magnetic field range and the same temperature range. Magnetic transport properties are analyzed using quantitative mobility spectrum analysis (QMSA). 2DEG and 3DEG transport mechanisms are separated by using QMSA results.","PeriodicalId":17795,"journal":{"name":"Karadeniz Fen Bilimleri Dergisi","volume":"290 6","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Al 0.3 Ga 0.7 N/GaN HEMT Yapısı için QMSA Metodu Uygulanması\",\"authors\":\"Ahmet Bi̇lgi̇li̇, Ömer Akpinar, Naki Kaya, M. Öztürk\",\"doi\":\"10.31466/kfbd.1276114\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, Al 0.3 Ga 0.7 N/GaN high electron mobility transistor (HEMT) structure is grown on a sapphire (Al2O3) substrate by using metal-organic vapor phase epitaxy (MOVPE), and its electron transport and magnetic transport properties are investigated. Resistivity is measured in the 20-350 K temperature range. Hall mobility and Hall carrier concentration are measured in the 0-1.5 T magnetic field range and the same temperature range. Magnetic transport properties are analyzed using quantitative mobility spectrum analysis (QMSA). 2DEG and 3DEG transport mechanisms are separated by using QMSA results.\",\"PeriodicalId\":17795,\"journal\":{\"name\":\"Karadeniz Fen Bilimleri Dergisi\",\"volume\":\"290 6\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-12-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Karadeniz Fen Bilimleri Dergisi\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.31466/kfbd.1276114\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Karadeniz Fen Bilimleri Dergisi","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31466/kfbd.1276114","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
本研究利用金属有机气相外延（MOVPE）技术，在蓝宝石（Al2O3）衬底上生长出 Al 0.3 Ga 0.7 N/GaN 高电子迁移率晶体管（HEMT）结构，并对其电子传输和磁传输特性进行了研究。电阻率是在 20-350 K 温度范围内测量的。霍尔迁移率和霍尔载流子浓度是在 0-1.5 T 磁场范围和相同温度范围内测量的。利用定量迁移率谱分析（QMSA）分析了磁传输特性。利用 QMSA 分析结果区分了 2DEG 和 3DEG 传输机制。
Al 0.3 Ga 0.7 N/GaN HEMT Yapısı için QMSA Metodu Uygulanması
In this study, Al 0.3 Ga 0.7 N/GaN high electron mobility transistor (HEMT) structure is grown on a sapphire (Al2O3) substrate by using metal-organic vapor phase epitaxy (MOVPE), and its electron transport and magnetic transport properties are investigated. Resistivity is measured in the 20-350 K temperature range. Hall mobility and Hall carrier concentration are measured in the 0-1.5 T magnetic field range and the same temperature range. Magnetic transport properties are analyzed using quantitative mobility spectrum analysis (QMSA). 2DEG and 3DEG transport mechanisms are separated by using QMSA results.
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